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  ON Semiconductor Electronic Components Datasheet  

2SB1302 Datasheet

Bipolar Transisitor

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2SB1302 pdf
Ordering number : EN2555C
2SB1302
Bipolar Transisitor
–20V, –5A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applicaitons
DC-DC converters, motor drivers, relay drivers, lamp drivers
Features
Adoption of FBET, MBIT processes
Low collector to emitter saturation voltage
Large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
--25 V
--20 V
--5 V
--5 A
--8 A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SB1302S-TD-E
2SB1302T-TD-E
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
1
0.4
0.5
2
1.5
3.0
3
0.75
0.4
TD
Electrical Connection
2
1
RANK
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
3
Semiconductor Components Industries, LLC, 2013
November, 2013
N2013 TKIM TC-00003058/31710EA TKIM/10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS No.2555-1/5


  ON Semiconductor Electronic Components Datasheet  

2SB1302 Datasheet

Bipolar Transisitor

No Preview Available !

2SB1302 pdf
2SB1302
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
1.3
150
--55 to +150
Conditions
VCB=--20V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--500mA
VCE=--2V, IC=--4A
VCE=--5V, IC=--200mA
VCB=--10V, f=1MHz
IC=--3A, IB=--60mA
IC=--3A, IB=--60mA
IC=--10μA, IE=0A
IC=--1mA, RBE=
IE=--10μA, IC=0A
See specied Test Circuit.
Ratings
min typ
140*
60
--25
--20
--5
320
60
--250
--1.0
40
200
10
max
--500
--500
400*
--500
--1.3
Unit
W
°C
°C
Unit
nA
nA
MHz
pF
mV
V
V
V
V
ns
ns
ns
* : 2SB1302 is classied by 500mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
PW=20μs
D.C.1%
IB1
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100μF
RL
+
470μF
VBE=5V
VCC= --10V
IC=10IB1= --10IB2= --2A
Ordering Information
Device
2SB1302S-TD-E
2SB1302T-TD-E
Package
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
memo
Pb Free
No.2555-2/5


Part Number 2SB1302
Description Bipolar Transisitor
Maker ON Semiconductor
Total Page 5 Pages
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