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  ON Semiconductor Electronic Components Datasheet  

BAS16DXV6T1 Datasheet

(BAS16DXV6T1 / BAS16DXV6T5) Dual Switching Diode

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BAS16DXV6T1 pdf
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BAS16DXV6T1,
BAS16DXV6T5
Preferred Device
Dual Switching Diode
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
VR
IF
IFM(surge)
75
200
500
V
mA
mA
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient RqJA
350 °C/W
(Note 1)
Characteristic
(Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance Junction-to-Ambient RqJA
250 °C/W
(Note 1)
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
http://onsemi.com
61
43
654
12 3
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
A6 MG
G
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BAS16DXV6T1
SOT−563
4 mm pitch
4000/Tape & Reel
BAS16DXV6T1G SOT−563
4 mm pitch
(Pb−Free) 4000/Tape & Reel
BAS16DXV6T5
SOT−563
2 mm pitch
8000/Tape & Reel
BAS16DXV6T5G SOT−563
2 mm pitch
(Pb−Free) 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
1
Publication Order Number:
BAS16DXV6/D


  ON Semiconductor Electronic Components Datasheet  

BAS16DXV6T1 Datasheet

(BAS16DXV6T1 / BAS16DXV6T5) Dual Switching Diode

No Preview Available !

BAS16DXV6T1 pdf
BAS16DXV6T1, BAS16DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Current
(VR = 75 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
Symbol
VF
IR
CD
trr
QS
VFR
Min
Max
715
855
1000
1250
1.0
50
30
2.0
6.0
45
1.75
Unit
mV
mA
pF
ns
PC
V
http://onsemi.com
2


Part Number BAS16DXV6T1
Description (BAS16DXV6T1 / BAS16DXV6T5) Dual Switching Diode
Maker ON Semiconductor
Total Page 6 Pages
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