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  ON Semiconductor Electronic Components Datasheet  

ESD7481 Datasheet

ESD Protection Diode

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ESD7481 pdf
ESD7481, SZESD7481
ESD Protection Diodes
Micro−Packaged Diodes for ESD Protection
The ESD7481 is designed to protect voltage sensitive components
that require ultra−low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, low leakage,
and fast response time, make these parts ideal for ESD protection on
designs where board space is at a premium. Because of its low
capacitance, the part is well suited for use in high frequency designs
such as USB 2.0 high speed and antenna line applications.
Features
Ultra−Low Capacitance 0.25 pF
Low Clamping Voltage
Small Body Outline Dimensions: 0.60 mm x 0.30 mm
Low Body Height: 0.3 mm
Stand−off Voltage: 3.3 V
Low Leakage
Insertion Loss: 0.030 dBm
Response Time is < 1 ns
Low Dynamic Resistance < 1 W
IEC61000−4−2 Level 4 ESD Protection
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
RF Signal ESD Protection
RF Switching, PA, and Antenna ESD Protection
Near Field Communications
www.onsemi.com
1
Cathode
2
Anode
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
FM
F = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package Shipping
ESD7481MUT5G
X3DFN2 15000 / Tape &
(Pb−Free)
Reel
SZESD7481MUT5G X3DFN2 15000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 61000−4−2 (ESD)
Contact
Air
±20 kV
±20
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum
(10 Second Duration)
°PD°
RqJA
TJ, Tstg
TL
250 mW
400 °C/W
−40 to +125 °C
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 7
1
Publication Order Number:
ESD7481/D


  ON Semiconductor Electronic Components Datasheet  

ESD7481 Datasheet

ESD Protection Diode

No Preview Available !

ESD7481 pdf
ESD7481, SZESD7481
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IPP
IT
VC VBR VRWM IR IIRT VRWM VBR VC V
IPP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Working Voltage
Breakdown Voltage (Note 2)
Reverse Leakage Current
Clamping Voltage (Note 3)
Clamping Voltage (Note 3)
ESD Clamping Voltage
Junction Capacitance
Dynamic Resistance
Insertion Loss
VRWM
VBR
IR
VC
VC
VC
CJ
RDYN
IT = 1 mA
VRWM = 3.3 V
IPP = 1 A
IPP = 3 A
Per IEC61000−4−2
VR = 0 V, f = 1 Mhz
VR = 0 V, f < 1 GHz
TLP Pulse
f = 1 Mhz
f = 8.5 GHz
3.3
6.0
< 1.0
50
10
12
See Figures 1 and 2
0.25 0.40
0.15 0.30
0.60
0.030
0.234
V
V
nA
V
V
pF
W
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
www.onsemi.com
2


Part Number ESD7481
Description ESD Protection Diode
Maker ON Semiconductor
Total Page 5 Pages
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