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  ON Semiconductor Electronic Components Datasheet  

ESD8104 Datasheet

ESD Protection Diode

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ESD8104 pdf
ESD8104
ESD Protection Diode
Low Capacitance Array for High Speed
Data Lines
The ESD8104 is designed to protect high speed data lines from
ESD. Ultralow capacitance and low ESD clamping voltage make this
device an ideal solution for protecting voltage sensitive high speed
data lines. The flowthrough style package allows for easy PCB layout
and matched trace lengths necessary to maintain consistent impedance
between high speed differential lines such as USB 3.0/3.1 and HDMI
2.0.
Features
Low Capacitance (0.37 pF Max, I/O to GND)
Protection for the Following IEC Standards:
IEC 6100042 (Level 4)
Low ESD Clamping Voltage
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
USB 3.0/3.1
eSATA
HDMI 1.3/1.4/2.0
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range TJ 55 to +125 °C
Storage Temperature Range
Tstg 55 to +150 °C
Lead Solder Temperature
Maximum (10 Seconds)
TL 260 °C
IEC 6100042 Contact (ESD)
IEC 6100042 Air (ESD)
ESD
ESD
±15 kV
±15 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
www.onsemi.com
UDFN10
CASE 517BB
MARKING
DIAGRAM
4C MG
G
4C = Specific Device Code (tbd)
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONFIGURATION
AND SCHEMATIC
N/C N/C GND N/C N/C
10 9 8 7 6
12 3 4 5
I/O I/O GND I/O I/O
I/O I/O I/O I/O
Pin 1 Pin 2 Pin 4 Pin 5
Pins 3, 8
Note: Common GND Only Minimum of 1 GND connection required
=
ORDERING INFORMATION
Device
Package Shipping
ESD8104MUTAG
UDFN10
3000 /
(PbFree) Tape & Reel
SZESD8104MUTAG UDFN10
3000 /
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
February, 2015 Rev. 6
1
Publication Order Number:
ESD8104/D


  ON Semiconductor Electronic Components Datasheet  

ESD8104 Datasheet

ESD Protection Diode

No Preview Available !

ESD8104 pdf
ESD8104
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
RDYN
Dynamic Resistance
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IPP
RDYN
VCL VBR VRWM
IIRT
VCL
RDYN
IPP
UniDirectional TVS
V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
(Note 1)
VRWM
VBR
IR
VC
I/O Pin to GND
IT = 1 mA, I/O Pin to GND
VRWM = 3.3 V, I/O Pin to GND
IEC6100042, ±8 kV Contact
3.3
4.0 5.0
1.0
See Figures 1 and 2
Clamping Voltage
TLP (Note 2)
See Figures 5 through 8
VC
IIPPPP
=
=
8A
8 A
IPP = 16 A
IPP = 16 A
IEC 6100042 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
IEC 6100042 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
8.5
4.5
11.4
8.0
Dynamic Resistance
RDYN
I/O Pin to GND
GND to I/O Pin
0.36
0.44
Junction Capacitance
CJ VR = 0 V, f = 1 MHz between I/O Pins and GND
VR = 0 V, f = 1 MHz between I/O Pins
VR = 0 V, f = 1 MHz, TA = 65°C between I/O Pins and GND
0.30
0.15
0.37
1. For test procedure see Figures 3 and 4 and application note AND8307/D.
2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
0.37
0.20
0.47
Unit
V
V
mA
V
V
W
pF
90
80
70
60
50
40
30
20
10
0
10
20
0 20 40 60 80 100 120
TIME (ns)
Figure 1. IEC6100042 +8 kV Contact
Clamping Voltage
140
10
0
10
20
30
40
50
60
70
80
9020
0 20 40 60 80 100 120
TIME (ns)
Figure 2. IEC6100042 8 kV Contact
Clamping Voltage
140
www.onsemi.com
2


Part Number ESD8104
Description ESD Protection Diode
Maker ON Semiconductor
Total Page 13 Pages
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