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  ON Semiconductor Electronic Components Datasheet  

MCR8DSN Datasheet

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR8DSN pdf
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MCR8DSM, MCR8DSN
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Surface Mount Lead Form − Case 369C
Miniature Plastic Package − Straight Leads − Case 369
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR8DSM
MCR8DSN
VDRM,
VRRM
600
800
V
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS)
8.0
A
Average On−State Current
(180° Conduction Angles; TC = 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(AV)
ITSM
I2t
5.1 A
90 A
34 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 msec, TC = 90°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width 1.0 msec, TC = 90°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to 110 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for negative gate voltage; positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the
device are exceeded.
http://onsemi.com
SCRs
8 AMPERES RMS
600 − 800 VOLTS
G
AK
MARKING
DIAGRAM
4
DPAK
CASE 369C
1 STYLE 4
YWW
CR
8DSxG
Y=
WW =
CR8DSx =
G=
Year
Work Week
Device Code
x= M or N
Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
Publication Order Number:
MCR8DSM/D


  ON Semiconductor Electronic Components Datasheet  

MCR8DSN Datasheet

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

No Preview Available !

MCR8DSN pdf
MCR8DSM, MCR8DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
RqJA
TL
Max Unit
2.2 °C/W
88
80
260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Symbol
Min Typ Max Unit
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1.0 kW) (Note 3)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
IDRM
IRRM
mA
− − 10
− − 500
Peak Reverse Gate Blocking Voltage (IGR = 10 mA)
Peak Reverse Gate Blocking Current (VGR = 10 V)
Peak Forward On−State Voltage (Note 4) (ITM = 16 A)
Gate Trigger Current (Continuous dc) (Note 5)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = −40°C
Gate Trigger Voltage (Continuous dc) (Note 5)
(VD = 12 V, RL = 100 W)
TJ = 25°C
TJ = −40°C
TJ = 110°C
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
TJ = 25°C
TJ = −40°C
Latching Current
(VD = 12 V, IG = 2.0 mA)
TJ = 25°C
TJ = −40°C
Total Turn−On Time
(Source Voltage = 12 V, RS = 6.0 kW, IT = 16 A(pk), RGK = 1.0 kW)
(VD = Rated VDRM, Rise Time = 20kns, Pulse Width = 10 ms)
DYNAMIC CHARACTERISTICS
VGRM
IRGM
VTM
IGT
VGT
IH
IL
tgt
10 12.5 18
− − 1.2
− 1.4 1.8
5.0 12 200
− − 300
0.45 0.65
−−
0.2 −
1.0
1.5
0.5 1.0 6.0
− − 10
0.5 1.0 6.0
− − 10
− 2.0 5.0
V
mA
V
mA
V
mA
mA
ms
Critical Rate of Rise of Off−State Voltage
dv/dt
V/ms
(VD = 0.67 X Rated VDRM, Exponential Waveform,
RGK = 1.0 kW, TJ = 110°C)
2.0 10
2. Surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%.
5. RGK current not included in measurements.
ORDERING INFORMATION
Device
Package
Shipping
MCR8DSMT4
DPAK
MCR8DSMT4G
MCR8DSNT4
DPAK
(Pb−Free)
DPAK
2500 / Tape & Reel
MCR8DSNT4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MCR8DSN
Description Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
Manufacturer ON Semiconductor
Total Page 6 Pages
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