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  ON Semiconductor Electronic Components Datasheet  

MGSF1P02LT1 Datasheet

Power MOSFET

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MGSF1P02LT1 pdf
MGSF1P02LT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
20
± 20
ID
IDM
PD
TJ, Tstg
750
2000
400
– 55 to
150
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
RθJA
TL
300
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
http://onsemi.com
750 mAMPS
20 VOLTS
RDS(on) = 350 mW
P–Channel
3
1
2
MARKING
DIAGRAM
3
SOT–23
CASE 318
1 STYLE 21
2
PC
W
W = Work Week
PIN ASSIGNMENT
Drain
3
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
12
Gate Source
ORDERING INFORMATION
Device
Package
Shipping
MGSF1P02LT1
MGSF1P02LT3
SOT–23 3000 Tape & Reel
SOT–23 10,000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MGSF1P02LT1/D


  ON Semiconductor Electronic Components Datasheet  

MGSF1P02LT1 Datasheet

Power MOSFET

No Preview Available !

MGSF1P02LT1 pdf
MGSF1P02LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.75 Adc)
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 )
Fall Time
Gate Charge (See Figure 6)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2.)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
1.0
TYPICAL ELECTRICAL CHARACTERISTICS
Typ Max Unit
– – Vdc
µAdc
– 1.0
– 10
±100
nAdc
1.7 2.4 Vdc
0.235
0.375
0.350
0.500
Ohms
130 –
120 –
60 –
pF
2.5
1.0
16
8.0
6000
ns
pC
– 0.6
– 0.75
1.5 –
A
V
1.5
VDS = 10 V
1.25
1
0.75
TJ = 150°C
0.5 -55°C
0.25 25°C
0 1 1.5 2 2.5 3 3.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
1.5
VGS = 3.5 V
1.25
3.25 V
1
0.75
0.5
0.25
0
0
3.0 V
2.75 V
2.5 V
2.25 V
1 2 34 56 7 8 9
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
10
http://onsemi.com
2


Part Number MGSF1P02LT1
Description Power MOSFET
Maker ON Semiconductor
Total Page 8 Pages
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