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  ON Semiconductor Electronic Components Datasheet  

MGSF3454XT1 Datasheet

Small-Signal MOSFETs Single N-Channel Field Effect Transistors

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MGSF3454XT1
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Low RDS(on) Small-Signal
MOSFETs Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High Cell
Density, HDTMOS® process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for use in small
power management circuitry. Typical applications are dcdc
converters, power management in portable and batterypowered
products such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP6 Surface Mount Package Saves Board Space
http://onsemi.com
NCHANNEL
ENHANCEMENTMODE
MOSFET
RDS(on) = 50 mW (TYP)
DD S
DDG
CASE 318G02, Style 1
TSOP 6 PLASTIC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ TA = 25°C
Drain Current Pulsed Drain Current (tp 10 ms)
VDSS
VGS
ID
IDM
30
± 20
1.75
20
Vdc
Vdc
A
Total Power Dissipation @ TA = 25°C
PD 950 mW
Operating and Storage Temperature Range
TJ, Tstg 55 to 150
°C
Thermal Resistance JunctiontoAmbient
RqJA
250 °C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Device Marking = 3G
Device
MGSF3454XT1
MGSF3454XT3
ORDERING INFORMATION
Reel Size
Tape Width
78 mm embossed tape
138 mm embossed tape
Quantity
3000
10,000
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 1
1
Publication Order Number:
MGSF3454XT1/D


  ON Semiconductor Electronic Components Datasheet  

MGSF3454XT1 Datasheet

Small-Signal MOSFETs Single N-Channel Field Effect Transistors

No Preview Available !

MGSF3454XT1 pdf
MGSF3454XT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 1.75 A)
(VGS = 4.5 Vdc, ID = 1.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Output Capacitance
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 1.0 A,
VGEN = 10 V, RL = 10 W)
Fall Time
Gate Charge
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
30
1.0
Typ Max Unit
Vdc
−−
mAdc
1.0
25
±100
nAdc
Vdc
−−
Ohms
0.05 0.065
0.07 0.095
345
215
140
pF
10 ns
15
20
10
15 nC
1.0 A
5.0 A
1.2 V
TYPICAL ELECTRICAL CHARACTERISTICS
7.0
VGS = 4.5 V
6.0
4.0 V
5.0
4.0
3.5 V
3.0
2.0 3.0 V
1.0
0
0
2.5 V
2.25 V
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
10
0.12
0.10
VGS = 10 V
0.08
0.06
0.04
TJ = 150°C
25°C
-55°C
0.02
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
ID, DRAIN CURRENT (AMPS)
Figure 2. OnResistance versus Drain Current
http://onsemi.com
2


Part Number MGSF3454XT1
Description Small-Signal MOSFETs Single N-Channel Field Effect Transistors
Maker ON Semiconductor
Total Page 6 Pages
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