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  ON Semiconductor Electronic Components Datasheet  

MGSF3455XT1 Datasheet

Small-Signal MOSFETs Single P-Channel Field Effect Transistors

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MGSF3455XT1 pdf
MGSF3455XT1
Preliminary Information
Low RDS(on) Small-Signal
MOSFETs Single P-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High
Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this
device ideal for use in small power management circuitry.
Typical applications are dcdc converters, power
management in portable and batterypowered products such
as computers, printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
http://onsemi.com
PCHANNEL
ENHANCEMENTMODE
MOSFET
RDS(on) = 80 mW (TYP)
DD S
DDG
CASE 318G02, Style 1
TSOP 6 PLASTIC
1256
DRAIN
3
GATE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
SOURCE
4
Symbol
Value
Unit
DraintoSource Voltage
VDSS 30 Vdc
GatetoSource Voltage — Continuous
VGS ± 20 Vdc
Drain Current — Continuous @ TA = 255C
Drain Current — Pulsed Drain Current (tp 3 10 ms)
ID 1.45 A
IDM 10
Total Power Dissipation @ TA = 255C
PD 400 mW
Operating and Storage Temperature Range
TJ, Tstg 55 to 150
°C
Thermal Resistance — JunctiontoAmbient
RθJA
300 °C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Device
MGSF3455XT1
MGSF3455XT3
ORDERING INFORMATION
Reel Size
Tape Width
78 mm embossed tape
138 mm embossed tape
Quantity
3000
10,000
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 2
1
Publication Order Number:
MGSF3455XT1/D


  ON Semiconductor Electronic Components Datasheet  

MGSF3455XT1 Datasheet

Small-Signal MOSFETs Single P-Channel Field Effect Transistors

No Preview Available !

MGSF3455XT1 pdf
MGSF3455XT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 μA)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 1.45 A)
(VGS = 4.5 Vdc, ID = 1.2 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Output Capacitance
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 1.0 A,
VGEN = 10 V, RL = 10 Ω)
Fall Time
Gate Charge
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
30
1.0
Typ Max Unit
Vdc
——
μAdc
— 1.0
— 5.0
±100
nAdc
0.080
0.134
0.100
0.190
Vdc
Ohms
90 — pF
50 —
10 —
10
15
20
10
3000
20
30
35
20
ns
pC
— 1.0
— 5.0
0.85 —
A
A
V
http://onsemi.com
2


Part Number MGSF3455XT1
Description Small-Signal MOSFETs Single P-Channel Field Effect Transistors
Maker ON Semiconductor
Total Page 4 Pages
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