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  ON Semiconductor Electronic Components Datasheet  

MMDL914T1 Datasheet

High-Speed Switching Diode

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MMDL914T1 pdf
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MMDL914T1
Preferred Device
High−Speed Switching
Diode
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
VR
IF
IFM(surge)
100
200
500
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
TA = 25°C (Note 1)
Derate above 25°C
Symbol
PD
Max Unit
200 mW
1.57 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
635 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 Minimum Pad.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min
Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
V(BR)
IR
CT
VF
trr
100
− Vdc
25 nAdc
5.0 mAdc
4.0 pF
1.0 Vdc
4.0 ns
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1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
5D M G
G
5D = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MMDL914T1 SOD−323 3000/Tape & Reel
MMDL914T1G
MMDL914T3G
SOD−323 3000/Tape & Reel
(Pb−Free)
SOD−323 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 4
1
Publication Order Number:
MMDL914T1/D


  ON Semiconductor Electronic Components Datasheet  

MMDL914T1 Datasheet

High-Speed Switching Diode

No Preview Available !

MMDL914T1 pdf
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
MMDL914T1
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
1.0
0.1
0.2
TA = 85°C
TA = −40°C
TA = 25°C
10
1.0
0.1
0.01
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
0.001
1.2 0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2 46
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
8
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2


Part Number MMDL914T1
Description High-Speed Switching Diode
Maker ON Semiconductor
Total Page 3 Pages
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