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  ON Semiconductor Electronic Components Datasheet  

NRVB1045MFST1G Datasheet

SWITCHMODE Power Rectifiers

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NRVB1045MFST1G pdf
MBR1045MFS,
NRVB1045MFS
Switch Mode
Power Rectifiers
These state−of−the−art devices have the following features:
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Applications
Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
Output Rectification in Compact Portable Consumer Applications
Freewheeling Diode used with Inductive Loads
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
45 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
A
Not Used
B1045
AYWZZ
C
C
B1045
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
MBR1045MFST1G
MBR1045MFST3G
NRVB1045MFST1G
NRVB1045MFST3G
Package Shipping
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1
Publication Order Number:
MBR1045MFS/D


  ON Semiconductor Electronic Components Datasheet  

NRVB1045MFST1G Datasheet

SWITCHMODE Power Rectifiers

No Preview Available !

NRVB1045MFST1G pdf
MBR1045MFS, NRVB1045MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 142°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 140°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
V
45
10 A
20 A
150 A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg
TJ
EAS
−65 to +175
−55 to +150
150
3B
°C
°C
mJ
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
1.7 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 10 A, TJ = 125°C)
(iF = 10 A, TJ = 25°C)
(iF = 20 A, TJ = 125°C)
(iF = 20 A, TJ = 25°C)
vF V
0.430
0.52
0.504
0.62
0.550
0.65
0.595
0.75
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR mA
47 170
0.076
0.500
Diode Capacitance
CD 300
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2


Part Number NRVB1045MFST1G
Description SWITCHMODE Power Rectifiers
Maker ON Semiconductor
Total Page 5 Pages
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