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  ON Semiconductor Electronic Components Datasheet  

NRVBB20H100CTT4G Datasheet

SWITCHMODE Power Rectifier

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NRVBB20H100CTT4G pdf
MBR20H100CTG,
MBRB20H100CTG,
MBRF20H100CTG,
NRVBB20H100CTT4G
Switch-mode
Power Rectifier
100 V, 20 A
Features and Benefits
Low Forward Voltage: 0.64 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately):
1.9 Grams (TO−220)
1.7 Grams (D2PAK)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2, 4
3
4
1
2
3
TO−220
CASE 221A
STYLE 6
1
2
3
TO−220 FULLPAKt
CASE 221D
STYLE 3
1
2
3
4
D2PAK 3
CASE 418B
STYLE 3
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1
Publication Order Number:
MBR20H100CT/D


  ON Semiconductor Electronic Components Datasheet  

NRVBB20H100CTT4G Datasheet

SWITCHMODE Power Rectifier

No Preview Available !

NRVBB20H100CTT4G pdf
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
AYWW
B20H100G
AKA
AYWW
B20H100G
AKA
AYWW
B20H100G
AKA
TO−220
TO−220 FULLPAK
A = Assembly Location
Y = Year
WW = Work Week
B20H100 = Device Code
G = Pb−Free Device
AKA = Polarity Designator
Figure 1. Marking Diagrams
D2PAK 3
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage‘
Average Rectified Forward Current
(Rated VR) TC = 162°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 160°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
10
20
250
V
A
A
A
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated VR)
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
TJ
Tstg
dv/dt
WAVAL
+175
*65 to +175
10,000
200
> 400
> 8000
°C
°C
V/ms
mJ
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR20H100CTG, MBRB20H100CTG and NRVBB20H100CTT4G)
Junction−to−Case
Junction−to−Ambient
(MBRF20H100CTG)
Junction−to−Case
°C/W
RqJC
RqJA
RqJC
2.0
60
2.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number NRVBB20H100CTT4G
Description SWITCHMODE Power Rectifier
Maker ON Semiconductor
Total Page 9 Pages
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