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  ON Semiconductor Electronic Components Datasheet  

NTD4855N Datasheet

Power MOSFET

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NTD4855N pdf
NTD4855N
Power MOSFET
25 V, 98 A, Single N--Channel, DPAK/IPAK
Features
Trench Technology
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb--Free Devices
Applications
VCORE Applications
DC--DC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current RθJA
(Note 1)
VDSS 25 V
VGS ±20 V
TA = 25°C
ID
18 A
TA = 85°C
14
Power Dissipation
RθJA (Note 1)
Continuous Drain
Current RθJA
(Note 2)
Power Dissipation
RθJA (Note 2)
Continuous Drain
Current RθJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
2.24 W
14 A
10.9
1.35 W
98 A
76
Power Dissipation
RθJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
66.7 W
197 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 21 Apk, L = 1.0 mH, RG = 25 Ω)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxPkg
TJ,
TSTG
IS
dV/dt
EAS
TL
45
--55 to
+175
56
6
220
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
25 V
RDS(ON) MAX
4.3 mΩ @ 10 V
6.0 mΩ @ 4.5 V
D
ID MAX
98 A
G
S
N--CHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4855N = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 3
1
Publication Order Number:
NTD4855N/D


  ON Semiconductor Electronic Components Datasheet  

NTD4855N Datasheet

Power MOSFET

No Preview Available !

NTD4855N pdf
NTD4855N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction--to--Case (Drain)
Junction--to--TAB (Drain)
Junction--to--Ambient – Steady State (Note 1)
Junction--to--Ambient – Steady State (Note 2)
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
Symbol
RθJC
RθJC--TAB
RθJA
RθJA
Value
2.25
3.5
67
111
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain--to--Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V, ID = 30 A
VGS = 10 V, VDS = 15 V, ID = 30 A
Turn--On Delay Time
td(ON)
Rise Time
Turn--Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
Fall Time
tf
Turn--On Delay Time
td(ON)
Rise Time
Turn--Off Delay Time
tr
td(OFF)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
Fall Time
tf
3. Pulse Test: pulse width 300 ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
25
1.45
Typ
22
TBD
3.5
4.6
80
2950
740
400
21.8
2.4
7.9
8.6
44
17.75
31.48
20.28
10.74
10.01
16.52
32.02
4.35
Max
1.0
10
±100
2.5
4.3
6.0
32.7
Unit
V
mV/°C
mA
nA
V
mV/°C
mΩ
S
pF
nC
nC
ns
ns
http://onsemi.com
2


Part Number NTD4855N
Description Power MOSFET
Maker ON Semiconductor
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