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  ON Semiconductor Electronic Components Datasheet  

NTTFS4C13N Datasheet

Power MOSFET

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NTTFS4C13N pdf
NTTFS4C13N
Power MOSFET
30 V, 38 A, Single N−Channel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA 10 s
(Note 1)
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
TC = 25°C
TC =80°C
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
30
±20
11.7
8.5
2.06
15.8
11.4
3.73
7.2
5.2
0.78
38
27
21.5
68
V
V
A
W
A
W
A
W
A
W
A
Current Limited by Package
TA = 25°C
IDmax
70
A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS 19 A
Drain to Source DV/DT
dV/dt
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 4 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS 22 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is absolute maximum rating. Parts are tested at TJ = 25°C Vqs = 10 V,
IL = 15 Apk, EAS = 11 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.4 mW @ 10 V
14 mW @ 4.5 V
D (5−8)
ID MAX
38 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C13 D
S AYWWG D
GGD
4C13
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4C13NTAG
Package
WDFN8
(Pb−Free)
Shipping
1500 /
Tape & Reel
NTTFS4C13NTWG WDFN8
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 1
1
Publication Order Number:
NTTFS4C13N/D


  ON Semiconductor Electronic Components Datasheet  

NTTFS4C13N Datasheet

Power MOSFET

No Preview Available !

NTTFS4C13N pdf
NTTFS4C13N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t 10 s) (Note 4)
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
5.8
60.8
160
33.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = TBD A,
Tcase = 25°C, ttransient = 100 ns
30
34
V
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
14.9 mV/°C
1.0
10
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
gFS
RG
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 12 A
VDS = 1.5 V, ID = 15 A
TA = 25°C
1.3
4.8
7.5
11.2
40
1.0
2.1 V
mV/°C
9.4
mW
14
S
W
Input Capacitance
CISS
770
Output Capacitance
COSS
VGS = 0 V, f = 1 MHz, VDS = 15 V
443
pF
Reverse Transfer Capacitance
CRSS
127
Capacitance Ratio
CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz
0.165
Total Gate Charge
QG(TOT)
7.8
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
VGS = 4.5 V, VDS = 15 V; ID = 30 A
1.4
2.9
nC
Gate−to−Drain Charge
QGD
3.7
Gate Plateau Voltage
VGP
3.6 V
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
15.2
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2


Part Number NTTFS4C13N
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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