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  ON Semiconductor Electronic Components Datasheet  

NTE4153N Datasheet

Small Signal MOSFET

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NTE4153N pdf
NTA4153N, NTE4153N,
NVA4153N, NVE4153N
Small Signal MOSFET
20 V, 915 mA, Single N−Channel
with ESD Protection, SC−75 and SC−89
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available
Applications
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
Steady State
VDSS
VGS
ID
PD
20 V
±6.0 V
915 mA
660
300 mW
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
1.3
−55 to
150
280
260
A
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Units
Junction−to−Ambient − Steady State (Note 1)
SC−75 / SOT−416
SC−89
RqJA
°C/W
416
400
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
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V(BR)DSS
20 V
RDS(on) TYP
0.127 W @ 4.5 V
0.170 W @ 2.5 V
0.242 W @ 1.8 V
0.500 W @ 1.5 V
ID MAX
915 mA
3
N−Channel MOSFET
12
MARKING DIAGRAM &
PIN ASSIGNMENT
3
SC−75 / SOT−416
2
1
CASE 463
STYLE 5
3
Drain
XX MG
3G
SC−89
2 CASE 463C
1
2
1 Gate Source
XX = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SC−75, SC−89
Gate 1
3 Drain
Source 2
Top View
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 7
1
Publication Order Number:
NTA4153N/D


  ON Semiconductor Electronic Components Datasheet  

NTE4153N Datasheet

Small Signal MOSFET

No Preview Available !

NTE4153N pdf
NTA4153N, NTE4153N, NVA4153N, NVE4153N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
20 26
18.4
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V, VDS = 16 V
VDS = 0 V, VGS = ±4.5 V
100 nA
±1.0 mA
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
0.45 0.76
−2.15
1.1 V
mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 350 mA
VGS = 1.5 V, ID = 40 mA
VDS = 10 V, ID = 400 mA
127 230 mW
170 275
242 700
500 950
1.4 S
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 16 V
VGS = 4.5 V, VDS = 10 V,
ID = 0.2 A
110 pF
16
12
1.82 nC
0.2
0.3
0.42
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 10 V,
ID = 0.2 A, RG = 10 W
3.7 ns
4.4
25
7.6
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 200 mA
TJ = 125°C
0.67 1.1 V
0.54
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2


Part Number NTE4153N
Description Small Signal MOSFET
Maker On Semiconductor
Total Page 6 Pages
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