http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Pan Jit International
Pan Jit International

PJW1NA50 Datasheet Preview

PJW1NA50 Datasheet

500V N-Channel MOSFET

No Preview Available !

PJW1NA50 pdf
PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50
500V N-Channel MOSFET
Voltage
500 V Current
1A
Features
RDS(ON), VGS@10V,ID@0.5A<9Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
TO-92
SOT-223
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB, TO-252, SOT-223, TO-92 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
TO-92 Approx. Weight : 0.007 ounces, 0.196grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AB TO-252 SOT-223 TO-92
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC
Derate above 25oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
VDS
VGS
ID
IDM
EAS
PD
TJ,TSTG
RθJC
RθJA
500
+30
1 0.3
4 1.2
42
25 3.3 3
0.2
0.026
0.024
-55~150
5
110
-
37.9 (Note 4)
-
140
Limited only By Maximum Junction Temperature
UNITS
V
V
A
A
mJ
W
W/ oC
oC
oC/W
August 07,2014-REV.01
Page 1



Pan Jit International
Pan Jit International

PJW1NA50 Datasheet Preview

PJW1NA50 Datasheet

500V N-Channel MOSFET

No Preview Available !

PJW1NA50 pdf
PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic (Note 5)
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=0.5A
VDS=500V,VGS=0V
VGS=+30V,VDS=0V
IS=1A,VGS=0V
500 - - V
2 3.02 4
- 7.6 9
V
Ω
-
0.02 1.0
uA
- +20 +100 nA
- 0.86 1.4 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=400V, ID=1A,
VGS=10V (Note 2,3)
VDS=25V, VGS=0V,
f=1.0MHZ
- 4.2 -
- 1.7 - nC
- 1.4 -
- 95 -
- 23 - pF
- 0.3 -
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
td(on)
tr
td(off)
tf
VDD=250V, ID=1A,
RG=25Ω (Note 2,3)
-5-
- 20 -
ns
-8-
- 24 -
Maximum Continuous Drain-Source
Diode Forward Current
IS
--- - - 1 A
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
--- - - 4 A
Reverse Recovery Time
trr VGS=0V, IS=1A
Reverse Recovery Charge
Qrr dIF/ dt=100A/us (Note 2)
NOTES :
1. L=30mH, IAS=1.6A, VDD=50V, RG=25 ohm, Starting TJ=25oC
- 155 -
- 0.53 -
ns
uC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
5. Guaranteed by design, not subject to production testing
August 07,2014-REV.01
Page 2


Part Number PJW1NA50
Description 500V N-Channel MOSFET
Maker Pan Jit International
Total Page 8 Pages
PDF Download
PJW1NA50 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 PJW1NA50 500V N-Channel MOSFET Pan Jit International
Pan Jit International
PJW1NA50 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components