http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





RF Micro Devices
RF Micro Devices

SUF-8533 Datasheet Preview

SUF-8533 Datasheet

Cascadable PHEMT MMIC Amplifier

No Preview Available !

SUF-8533 pdf
www.DataSheet4U.com
PreliminarySUF-8533DC
to 12GHz, Cas-
cadable
pHEMT MMIC
Amplifier
SUF-8533
DC to 12GHz, CASCADABLE pHEMT MMIC
AMPLIFIER
Package: QFN, 16-Pin, 3mmx3mm
Product Description
RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT
MMIC amplifier covering DC to 12GHz. This pHEMT FET based amplifier
uses a self-bias Darlington topology featuring a gain and temperature
compensating active bias network that operates from a single 5V supply.
It offers efficiency, cascadable performance in a compact 3mmx3mm
Ceramic QFN package. It is well suited for RF, LO, and IF driver applica-
tions.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„ Broadband Performance
„ Gain=15.4dB at 3GHz
„ P1dB=16.7dBm at 3GHz
„ Low-Noise, Efficient Gain Block
„ 5V Single Supply Operation
„ Low Gain Variation versus Tem-
perature
Applications
„ Broadband Communications
„ Test Instrumentation
„ Military and Space
„ LO and IF Mixer Applications
„ High IP3 RF Driver Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
DC
12.0
GHz
Small Signal Power Gain, GP
15.4
dB Freq=3GHz
14.6
dB Freq=6GHz
11.7
dB Freq=10GHz
Output Power at 1dB Compression
16.7
dBm Freq=3GHz
16.8
dBm Freq=6GHz
14.6
dBm Freq=10GHz
Output Third Order Intercept Point
27.1
dBm Freq=3GHz
25.7
dBm Freq=6GHz
23.5
dBm Freq=10GHz
Input Return Loss
10.7
dB Freq=3GHz
Output Return Loss
Device Operating Voltage
22.3
4.0
dB 18W resistor between VD and VDD, Freq=3GHz
V
Current
58 mA
Noise Figure, NF
4.0 dB Freq=3GHz
Thermal Resistance
159
°C/W
Junction to backside
Test Conditions: ZO=50Ω, VS=5V, ID=58mA, RBIAS=18.0Ω, T=25°C, OIP3 Tone Spacing=1MHz with POUT/TONE=0dBm. Circuit board data with bias tees.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-106168 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6



RF Micro Devices
RF Micro Devices

SUF-8533 Datasheet Preview

SUF-8533 Datasheet

Cascadable PHEMT MMIC Amplifier

No Preview Available !

SUF-8533 pdf
SUF-8533
Preliminary
www.DataSheet4U.com
Absolute Maximum Ratings
Parameter
Rating
Unit
Total Current (lD)
Device Voltage (VD)
Power Dissipation
90 mA
5.5 V
495 mW
RF Input Power
+20 dBm
Storage Temperature Range
-65 to +150
°C
Operating Temperature Range (TL)
-40 to +85
°C
Operating Junction Temperature (TJ)
+150
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=Backside of die
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance (Circuit Board with Bias Tees) VS=5V, RBIAS=18.0Ω, T=25°C, Z=50Ω
Parameter
Units 500MHz 1.5GHz 3.5GHz 6.5GHz
Small Signal Gain
dB
16.2
16.0
15.1
14.5
Output 3rd Order Intercept Point (see note 1)
dBm
28.7
28.1
26.3
25.2
Output Power at 1dB Compression
dBm
17.3
17.1
16.3
16.3
Input Return Loss
dB
25.3
16.7
10.3
17.9
Output Return Loss
dB
41.6
23.6
16.8
13.7
Reverse Isolation
dB
22.0
22.1
22.4
22.0
Noise Figure
dB 4.6 3.6 4.0 4.2
Note 1: 0dBm/tone, 1MHz tone spacing
9.5 GHz
11.8
23.5
14.5
8.4
11.2
22.9
4.8
12 GHz
10.9
23.5
13.4
11.7
13.9
22.8
4.8
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-106168 Rev A


Part Number SUF-8533
Description Cascadable PHEMT MMIC Amplifier
Maker RF Micro Devices
Total Page 6 Pages
PDF Download
SUF-8533 pdf
Download PDF File
SUF-8533 pdf
View for Mobile






Related Datasheet

1 SUF-8533 Cascadable PHEMT MMIC Amplifier RF Micro Devices
RF Micro Devices
SUF-8533 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components