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Rohm Semiconductor Electronic Components Datasheet

R8008ANJ Datasheet

Power MOSFET

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R8008ANJ pdf
R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
800V
0.98W
8A
40W
lOutline
LPT(S)
(SC-83)
(2)
(1)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R8008ANJ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAS*3
PD
Tj
Tstg
dv/dt *5
800
8.0
4.3
32
30
4.2
3.4
4.0
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.10 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

R8008ANJ Datasheet

Power MOSFET

No Preview Available !

R8008ANJ pdf
R8008ANJ
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 640V, ID = 8.0A
Tj = 125°C
Values
50
Unit
V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient *6
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 3.13 °C/W
- - 80 °C/W
- - 265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
800 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DSS VGS = 0V, ID = 4.0A
- 900 -
V
Zero gate voltage
drain current
VDS = 800V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
0.1 100 mA
- 1000
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3
-
5
V
Static drain - source
on - state resistance
VGS = 10V, ID = 4.0A
RDS(on) *7 Tj = 25°C
Tj = 125°C
- 0.75 0.98 W
- 1.70 -
Gate input resistance
RG f = 1MHz, open drain
-
6.4
-
W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/13
2013.10 - Rev.A


Part Number R8008ANJ
Description Power MOSFET
Maker ROHM
Total Page 14 Pages
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