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Renesas Electronics Components Datasheet

HAT2175H Datasheet

Silicon N Channel Power MOS FET

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HAT2175H pdf
HAT2175H
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 33 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
5
D
4
G
SSS
123
REJ03G0006-0400
Rev.4.00
Sep 20, 2005
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
100
± 20
15
60
15
15
22.5
15
8.34
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.4.00 Sep 20, 2005 page 1 of 7


Renesas Electronics Components Datasheet

HAT2175H Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

HAT2175H pdf
HAT2175H
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
100
± 20
4.0
15
Typ
33
34
25
1445
185
61
0.55
21
8
4.5
17
8.2
28
4.7
0.84
45
Max
± 10
1
6.0
42
46
1.10
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, I D = 20mA
ID = 7.5 A, VGS = 10 V Note4
ID = 7.5 A, VGS = 8 V Note4
ID = 7.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 50 V, VGS = 10 V,
ID = 15 A
VGS = 10 V, ID = 7.5 A,
VDD 30 V, RL = 4 ,
Rg = 4.7
IF = 15 A, VGS = 0 Note4
IF = 15 A, VGS = 0,
diF/ dt = 100 A/ µs
Rev.4.00 Sep 20, 2005 page 2 of 7


Part Number HAT2175H
Description Silicon N Channel Power MOS FET
Maker Renesas Technology
Total Page 8 Pages
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