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Renesas Electronics Components Datasheet

K1166 Datasheet

Silicon N Channel MOS FET

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K1166 pdf
2SK1165, 2SK1166
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
REJ03G0914-0200
(Previous: ADE-208-1252)
Rev.2.00
Sep 07, 2005
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6


Renesas Electronics Components Datasheet

K1166 Datasheet

Silicon N Channel MOS FET

No Preview Available !

K1166 pdf
2SK1165, 2SK1166
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1165
2SK1166
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol
Drain to source
breakdown voltage
2SK1165
2SK1166
V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
IGSS
Zero gate voltage drain 2SK1165
current
2SK1166
IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on 2SK1165
state resistance
2SK1166
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse recovery
time
trr
Note: 3. Pulse test
Min
450
500
±30
2.0
6.0
Typ
0.40
0.45
10
1450
410
55
20
70
120
60
1.0
450
Ratings
450
500
±30
12
48
12
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
0.55
0.60
Unit
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
ID = 6 A, VGS = 10 V *3
S ID = 6 A, VDS = 10 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 6 A, VGS = 10 V,
ns RL = 5
ns
ns
V IF = 12 A, VGS = 0
ns IF = 12 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6


Part Number K1166
Description Silicon N Channel MOS FET
Maker Renesas Technology
Total Page 6 Pages
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