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Rohm Semiconductor Electronic Components Datasheet

DA227Y Datasheet

Switching diode

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DA227Y pdf
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Diodes
DA227Y
Switching diode
DA227Y
zApplications
Ultra high speed switching
zFeatures
1) Ultra small mold type. (EMD4)
2) High reliability.
zConstruction
Silicon epitaxial planar
z Dimensions (Unit : mm)
1.±00..015
0.22±0.05
(4) (3)
0.13±0.05
z Land size figure (Unit : mm)
0.5
0~0.1
(1) (2)
0.5 0.5
1.0±0.1
ROHM : EMD4
JEITA : SC-75A Size
dot (year w eek factory)
0.5±0.05
EMD4
1.0
z Structure
z Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
0.3±0.1
1..76±0.005.1
1PIN
4.0±0.1
φ0.8±0.1
0.65±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average rectified forward current (Single)
Surge current t=1us(Single)
Power dissipation *1
Junction temperature
Storage temperature
Rated in slash put frequency
Symbol
VRM
VR
IFM
Io
Isurge
Pd
Tj
Tstg
Limits
80
80
300
100
4
150
150
-55 to +150
100
Unit
V
V
mA
mA
A
mW/Total
MHz
*1Pd=120mW when only 1 circuit is operating.
CONDITION = Each terminal mounted on a recommended land pattern. (0.35×0.9mm)
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
Capacitance between terminals
VF
IR
Ct
Reverse recovery time
trr
Min.
-
-
-
-
Typ. Max.
- 1.2
- 0.1
- 3.5
-4
Unit Conditions
V IF=100mA
µA VR=70V
pF VR=6V , f=1MHz
ns VR=6V , IF=5mA , RL=50Ω
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

DA227Y Datasheet

Switching diode

No Preview Available !

DA227Y pdf
Diodes
zElectrical characteristic curves (Ta=25°C)
100 Ta=75℃
10000
Ta=125℃
1000
10
Ta=150℃
1
Ta=25℃
Ta=-25℃
100
10
1
Ta=150℃ Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.1
0
100 200 300 400 500 600 700 800 900 100
FORWARD VOLTAGE:VF(mV)
0
VF-IF CHARACTERISTICS
0.01
0
10 20 30 40 50 60 70
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
80
10
1
0.1
0
DA227Y
f=1MHz
5 10 15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
950 100
Ta=25℃
90
IF=100mA
940
n=30pcs
80
70
930 60
50
920 40
30
910
AVE:921.7mV
900
20
10
0
VF DISPERSION MAP
Ta=25℃
VR=80V
n=10pcs
AVE:9.655n
IR DISPERSION MAP
10
9
8
7
6
5
4
3
2
1
0
Ta=25℃
VR=6V
f=1MHz
n=10pcs
AVE:1.17pF
Ct DISPERSION MAP
20 10
Ifsm 1cyc
9
8
15
8.3ms
7
6
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
5
4
3
Ifsm
8.3ms 8.3ms
1cyc
10 5
42
3
5
21
AVE:3.50A
0
IFSM DISRESION MAP
1 AVE:1.93ns
0
trr DISPERSION MAP
0
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
1
0.1
Ifsm
t
1000
100
10
1 10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
100 0.001
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
1ms time
300us
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
10
9
8
7
6
5
4
3
2
1
0
AVE:0.97kV
AVE:2.54kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.A
2/2


Part Number DA227Y
Description Switching diode
Maker Rohm
Total Page 3 Pages
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DA227Y pdf
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