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Rohm Semiconductor Electronic Components Datasheet

DTC115GSA Datasheet

Digital transistors (built-in resistor)

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DTC115GSA pdf
Transistors
DTC115GUA / DTC115GKA / DTC115GSA
Digital transistors (built-in resistor)
DTC115GUA / DTC115GKA / DTC115GSA
zFeatures
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making device design easy.
3) Higher mounting densities can be achieved.
zEquivalent circuit
B
R
E : Emitter
C : Collector
B : Base
C
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltag
Emitter-base voltage
Collector current
Collector power DTA115GUA / DTA115GKA
dissipation
DTA115GSA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
300
150
55 to +150
Unit
V
V
V
mA
mW
mW
°C
°C
zPackage, marking, and packaging specifications
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC115GUA
UMT3
K29
T106
3000
DTC115GKA
SMT3
K29
T146
3000
DTC115GSA
SPT
TP
5000
zExternal dimensions (Unit : mm)
DTC115GUA
1.25
2.1
0.1Min.
ROHM : UMT3
EIAJ : SC-70
DTC115GKA
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
0.3Min.
ROHM : SMT3
EIAJ : SC-59
DTC115GSA
4
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltag
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
30
82
70
Typ.
100
250
Max.
0.5
58
0.3
130
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=72µA
VCB=50V
VEB=4V
IC=5mA, IB=0.25mA
IC=5mA, VCE=5V
VCE=10V, IE=−5mA, f=100MHz
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

DTC115GSA Datasheet

Digital transistors (built-in resistor)

No Preview Available !

DTC115GSA pdf
Transistors
DTC115GUA / DTC115GKA / DTC115GSA
zElectrical characteristics curves
1k
500 VCE=5V
Ta=100°C
200
Ta=25°C
100
50 Ta = −40°C
20
10
5
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current transfer ratio vs.
collector current characteristics
1
500m lC/lB=20/1
200m
100m Ta=100°C
Ta=25°C
50m
Ta=−40°C
20m
10m
5m
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage vs.
collector current characteristics
Rev.A
2/2


Part Number DTC115GSA
Description Digital transistors (built-in resistor)
Maker Rohm
Total Page 3 Pages
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