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SST39W800A Datasheet Preview

SST39W800A Datasheet

8 Mbit (x16) Multi-Purpose Flash

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8 Mbit (x16) Multi-Purpose Flash
SST39WF800A
FEATURES:
SST39WF800A1.8V 8Mb (x16) MPF memory
Data Sheet
• Organized as 512K x16
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 5 µA (typical)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Fast Read Access Time
– 90 ns
• Latched Address and Data
• Fast Erase and Word-Program
– Sector-Erase Time: 36 ms (typical)
– Block-Erase Time: 36 ms (typical)
– Chip-Erase Time: 140 ms (typical)
– Word-Program Time: 28 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (5mm x 6mm) Micro-Package
– 48-ball XFLGA (5mm x 6mm) Micro-Package
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF800A device is a 512K x16 CMOS Multi-
Purpose Flash (MPF) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39WF800A writes (Pro-
gram or Erase) with a 1.65-1.95V power supply. This
device conforms to JEDEC standard pin assignments for
x16 memories.
Featuring high-performance Word-Program, the
SST39WF800A device provides a typical Word-Program
time of 28 µsec. The device uses Toggle Bit or Data# Poll-
ing to detect the completion of the Program or Erase opera-
tion. To protect against inadvertent writes, it has on-chip
hardware and software data protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, this device is offered with a guaranteed typical
endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39WF800A device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
it significantly improves performance and reliability, while
lowering power consumption. It inherently uses less energy
©2006 Silicon Storage Technology, Inc.
S71258-05-000
7/06
1
during Erase and Program than alternative flash technolo-
gies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash technologies. These devices also improve flexibility
while lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39WF800A
is offered in a 48-ball TFBGA package and a 48-ball Micro-
Package. See Figure 3 and Figure 2 for pin assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.



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SST39W800A Datasheet Preview

SST39W800A Datasheet

8 Mbit (x16) Multi-Purpose Flash

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SST39W800A pdf
Data Sheet
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
Read
The Read operation of the SST39WF800A is controlled by
CE# and OE#, both have to be low for the system to obtain
data from the outputs. CE# is used for device selection.
When CE# is high, the chip is deselected and only standby
power is consumed. OE# is the output control and is used
to gate data from the output pins. The data bus is in high
impedance state when either CE# or OE# is high. Refer to
the Read cycle timing diagram for further details (Figure 4).
Word-Program Operation
The SST39WF800A is programmed on a word-by-word
basis. Before programming, the sector where the word
exists must be fully erased. The Program operation is
accomplished in three steps. The first step is the three-byte
load sequence for Software Data Protection. The second
step is to load word address and word data. During the
Word-Program operation, the addresses are latched on the
falling edge of either CE# or WE#, whichever occurs last.
The data is latched on the rising edge of either CE# or
WE#, whichever occurs first. The third step is the internal
Program operation which is initiated after the rising edge of
the fourth WE# or CE#, whichever occurs first. The Pro-
gram operation, once initiated, will be completed within 40
µs. See Figures 5 and 6 for WE# and CE# controlled Pro-
gram operation timing diagrams and Figure 15 for flow-
charts. During the Program operation, the only valid reads
are Data# Polling and Toggle Bit. During the internal Pro-
gram operation, the host is free to perform additional tasks.
Any commands issued during the internal Program opera-
tion are ignored.
8 Mbit Multi-Purpose Flash
SST39WF800A
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system
to erase the device on a sector-by-sector (or block-by-
block) basis. The SST39WF800A offers both Sector-Erase
and Block-Erase mode. The sector architecture is based
on uniform sector size of 2 KWord. The Block-Erase mode
is based on uniform block size of 32 KWord. The Sector-
Erase operation is initiated by executing a six-byte com-
mand sequence with Sector-Erase command (30H) and
sector address (SA) in the last bus cycle. The Block-Erase
operation is initiated by executing a six-byte command
sequence with Block-Erase command (50H) and block
address (BA) in the last bus cycle. The sector or block
address is latched on the falling edge of the sixth WE#
pulse, while the command (30H or 50H) is latched on the
rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The End-of-
Erase operation can be determined using either Data#
Polling or Toggle Bit methods. See Figures 9 and 10 for tim-
ing waveforms. Any commands issued during the Sector-
or Block-Erase operation are ignored.
Chip-Erase Operation
The SST39WF800A provides a Chip-Erase operation,
which allows the user to erase the entire memory array to
the ‘1’ state. This is useful when the entire device must be
quickly erased.
The Chip-Erase operation is initiated by executing a six-
byte command sequence with Chip-Erase command (10H)
at address 5555H in the last byte sequence. The Erase
operation begins with the rising edge of the sixth WE# or
CE#, whichever occurs first. During the Erase operation,
the only valid read is Toggle Bit or Data# Polling. See Table
4 for the command sequence, Figure 8 for timing diagram,
and Figure 18 for the flowchart. Any commands issued dur-
ing the Chip-Erase operation are ignored.
©2006 Silicon Storage Technology, Inc.
2
S71258-05-000
7/06


Part Number SST39W800A
Description 8 Mbit (x16) Multi-Purpose Flash
Maker SST
Total Page 25 Pages
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