http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




STMicroelectronics Electronic Components Datasheet

BCP52-16 Datasheet

LOW POWER PNP TRANSISTOR

No Preview Available !

BCP52-16 pdf
www.DataSheet4U.com
® BCP52-16
LOW POWER PNP TRANSISTOR
Ordering Code
BCP52-16
Marking
BCP5216
s SILICON EPITAXIAL PLANAR PNP MEDIUM
VOLTAGE TRANSISTOR
s SOT-223 PLASTIC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
s TAPE AND REEL PACKING
s THE NPN COMPLEMENTARY TYPE IS
BCP55-16
APPLICATIONS
s MEDIUM VOLTAGE LOAD SWITCH
TRANSISTORS
s OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
s AUTOMOTIVE POST-VOLTAGE
REGULATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Collector-Emitter Voltage (RBE = 1K)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tamb = 25 oC
Storage Temperature
Max. Operating Junction Temperature
September 2003
Value
-60
-60
-60
-5
-1
-1.5
-0.1
-0.2
1.4
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

BCP52-16 Datasheet

LOW POWER PNP TRANSISTOR

No Preview Available !

BCP52-16 pdf
BCP52-16
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Device mounted on a PCB area of 1 cm2
Max
89.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
Tj = 125 oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CER
Collector-Emitter
Breakdown Voltage
(RBE = 1 K)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
IC = -100 µA
IC = -20 mA
IC = -100 µA
IE = -10 µA
IC = -500 mA IB = -50 mA
VBE(on)Base-Emitter On
Voltage
IC = -500 mA VCE = -2 V
hFEDC Current Gain
IC = -5 mA
IC = -150 mA
IC = -500 mA
VCE = -2 V
VCE = -2 V
VCE = -2 V
fT Transition Frequency IC = -10 mA VCE = -5 V f = 20 MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min.
-60
-60
-60
-5
40
100
25
Typ.
50
Max.
-100
-10
-0.5
-1
250
Unit
nA
µA
V
V
V
V
V
V
MHz
2/4


Part Number BCP52-16
Description LOW POWER PNP TRANSISTOR
Maker ST Microelectronics
Total Page 4 Pages
PDF Download
BCP52-16 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 BCP52-10 PNP Silicon AF Transistors (For AF driver and output stages High collector current) Siemens Semiconductor Group
Siemens Semiconductor Group
BCP52-10 pdf
2 BCP52-10 PNP Silicon AF Transistors Infineon Technologies AG
Infineon Technologies AG
BCP52-10 pdf
3 BCP52-16 PNP medium power transistors NXP
NXP
BCP52-16 pdf
4 BCP52-16 PNP Silicon AF Transistors (For AF driver and output stages High collector current) Siemens Semiconductor Group
Siemens Semiconductor Group
BCP52-16 pdf
5 BCP52-16 PNP Silicon AF Transistors Infineon Technologies AG
Infineon Technologies AG
BCP52-16 pdf
6 BCP52-16 LOW POWER PNP TRANSISTOR ST Microelectronics
ST Microelectronics
BCP52-16 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components