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STMicroelectronics Electronic Components Datasheet

NAND512-M Datasheet

(NANDxxx-M) NAND Flash Memories

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NAND512-M pdf
NAND256-M
NAND512-M, NAND01G-M
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Features
Multi-Chip Packages
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 1 die of 256 Mb (x16) SDR
LPSDRAM
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 2 dice of 256 Mb (x16) SDR
LPSDRAMs
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash +1 die of 256 Mb (x16) DDR
LPSDRAM
– 1 die of 512 Mb (x16) NAND Flash + 1 die
of 256 Mb or 512 Mb (x16) DDR LPSDRAM
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
LFBGA137 10.5 x 13 x 1.4mm
TFBGA137 10.5 x 13 x 1.2 mm(1)
Supply voltages
– VDDF = 1.7V to 1.95V or 2.5V to 3.6V
– VDDD = VDDQD = 1.7V to 1.9V
Electronic Signature
ECOPACK® packages
Temperature range
– -30 to 85°C
Flash Memory
NAND Interface
– x8 or x16 bus width
– Multiplexed Address/ Data
(1) Preliminary specifications.
Fast Block Erase
– Block erase time: 2ms (typ)
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Status Register
Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
LPSDRAM
Interface: x16 or x 32 bus width
Deep Power Down mode
Page size
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
1.8v LVCMOS interface
Quad internal Banks controlled by BA0 and
BA1
Block size
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
Page Read/Program
– Random access: 15µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
Automatic and controlled Precharge
Auto Refresh and Self Refresh
– 8,192 Refresh cycles/64ms
– Programmable Partial Array Self Refresh
– Auto Temperature Compensated Self
Refresh
Wrap sequence: sequential/interleave
Copy Back Program mode
– Fast page copy without external buffering
Burst Termination by Burst Stop command and
Precharge command
August 2006
Rev 5
1/23
www.st.com
2


STMicroelectronics Electronic Components Datasheet

NAND512-M Datasheet

(NANDxxx-M) NAND Flash Memories

No Preview Available !

NAND512-M pdf
NAND256-M, NAND512-M, NAND01G-M
Table 1. Product List
Reference Part Number
NAND Product
LPSDRAM Product
Package
NAND256R3M0
256 Mbit (x8), 1.8V 256 Mbit SDR, (x16), 1.8V, 104MHz TFBGA107
NAND256-M NAND256R4M3
256Mbit (x16) 1.8V
256 Mbit DDR (x16) 1.8V, 133MHz TFBGA149
NAND256W3M4
256Mbit (x16) 3V
256 Mbit SDR (x16), 1.8V, 104MHz TFBGA149
NAND512R3M0
256 Mbit SDR (x16), 1.8V, 104MHz TFBGA107
NAND512R4M3
NAND512-M NAND512R4M5
512 Mbit (x8), 1.8V
256 Mbit DDR (x16) 1.8V, 133MHz TFBGA149
512 Mbit DDR (x16) 1.8V, 133MHz TFBGA149
NAND512W3M2
512Mbit (x8) 3V
512Mbit SDR (2x16) (2x256Mbit
SDR x16) 1.8V,104Mhz
LFBGA 137
NAND01G-M
NAND01GW3M2
2 x 512Mbit NAND (x8) 3V
512 Mbit SDR (2x16) (2 x 256Mbit
SDR x16) 1.8V, 104MHz
1 Gbit NAND (x8) 3V 512Mbit SDR (x32) 1.8V, 133MHz
LFBGA137
TFBGA137
2/23


Part Number NAND512-M
Description (NANDxxx-M) NAND Flash Memories
Maker ST Microelectronics
Total Page 23 Pages
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