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SD1274-01 Datasheet

RF POWER BIPOLAR TRANSISTORS

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SD1274-01 pdf
SD1274-01
RF POWER BIPOLAR TRANSISTORS
VHF MOBILE APPLICATIONS
FEATURES SUMMARY
160 MHz
13.6 VOLTS
COMMON EMITTER
POUT = 30 W MIN. WITH 10 dB GAIN
Figure 1. Package
DESCRIPTION
The SD1274-01 is a 13.6 V Class C epitaxial sili-
con NPN planar transistor designed primarily for
VHF communications. The SD1274-01 utilizes an
emitter ballasted die geometry to withstand severe
load mismatch conditions.
.380 4L FL (M113)
epoxy sealed
Figure 2. Pin Connection
Table 1. Order Codes
Order Codes
SD1274-01
Marking
SD1274-01
1. Collector
2. Emitter
3. Base
4. Emitter
Package
M113
Packaging
PLASTIC TRAYS
May 2004
REV. 2
1/7


STMicroelectronics Electronic Components Datasheet

SD1274-01 Datasheet

RF POWER BIPOLAR TRANSISTORS

No Preview Available !

SD1274-01 pdf
SD1274-01
Table 2. Absolute Maximum Ratings (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Device Current
PDISS
Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
Table 3. Thermal Data
Symbol
Parameter
RTH(j-c)
Junction-Case Thermal Resistance
ELECTRICAL SPECIFICATIONS (TCASE = 25°C)
Table 4. Static
Symbol
Test Conditions
BVCES
BVCEO
BVEBO
ICBO
hFE
IC = 15 mA; VBE = 0 mA
IC = 50 mA; IB = 0 mA
IE = 5 mA; IC = 0 mA
VCB = 15 V; IE = 0 mA
VCE = 5 V; IC = 250 mA
Table 5. Dynamic
Symbol
Test Conditions
POUT
GP
COB
f = 160 MHz; PIN = 3.0 W; VCE = 13.6 V
f = 160 MHz; PIN = 3.0 W; VCE = 13.6 V
f = 1 MHz; VCB = 15 V
Value
36
16
36
4.0
8.0
70
+200
– 65 to +150
Value
1.2
Unit
V
V
V
V
A
W
°C
°C
Unit
°C/W
Min.
36
16
4.0
20
Value
Typ.
Max.
5
Unit
V
V
V
mA
Min.
30
10
Value
Typ.
95
Max.
Unit
W
dB
pF
2/7


Part Number SD1274-01
Description RF POWER BIPOLAR TRANSISTORS
Maker STMicroelectronics
Total Page 7 Pages
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