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STMicroelectronics Electronic Components Datasheet

STB60NE03L-12 Datasheet

N-CHANNEL Power MOSFET

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STB60NE03L-12 pdf
® STB60NE03L-12
N - CHANNEL 30V - 0.009 - 60A - D2PAK
"SINGLE FEATURE SIZE" POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NE03L-12 30 V <0.012
60 A
s TYPICAL RDS(on) = 0.009
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
PRELIMINARY DATA
1
D2PAK
TO-263
(Suffix "T4")
3
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1998
Value
Unit
30 V
30 V
± 20
V
60 A
42 A
240 A
100
0.67
W
W/oC
7 V/ns
-65 to 175
oC
175 oC
(1) ISD 60 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
1/5


STMicroelectronics Electronic Components Datasheet

STB60NE03L-12 Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STB60NE03L-12 pdf
STB60NE3L1-16
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.5
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
Max Value
60
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS ID = 250 µA
VGS = 10 V ID = 30 A
VGS = 5 V ID = 30 A
Min.
1
Typ.
1.7
Max.
2.5
Unit
V
0.009 0.012
0.018
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
60 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =30 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
20
Typ.
30
Max.
Unit
S
2200
570
200
2800
750
250
pF
pF
pF
2/5


Part Number STB60NE03L-12
Description N-CHANNEL Power MOSFET
Maker ST Microelectronics
Total Page 5 Pages
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