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STMicroelectronics Electronic Components Datasheet

STB70NF3LL Datasheet

N-channel Power MOSFET

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STB70NF3LL pdf
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® STB70NF3LL
N-CHANNEL 30V - 0.008 - 70A D2PAK
LOW GATE CHARGE STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB70NF3LL
30 V < 0.01 70 A
s TYPICAL RDS(on) = 0.01 @ 4.5V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
PRELIMINARY DATA
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
3
1
D2PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ()
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
May 2000
Va l u e
30
30
± 15
70
50
280
100
0.67
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /o C
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

STB70NF3LL Datasheet

N-channel Power MOSFET

No Preview Available !

STB70NF3LL pdf
STB70NF3LL
THERMAL DATA
Rthj-case
R th j -a mb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature F or Soldering Purpose
1. 5
6 2. 5
3 00
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Tc =125 oC
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V
Resistance
VGS = 4. 5V
ID = 35 A
ID = 18 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
70
Typ. Max.
0.008 0.01
0.01 0.012
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =35 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
40
Max.
Unit
S
1700
500
115
pF
pF
pF
2/6


Part Number STB70NF3LL
Description N-channel Power MOSFET
Maker ST Microelectronics
Total Page 6 Pages
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