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STMicroelectronics Electronic Components Datasheet

STD40NE03L Datasheet

N-CHANNEL POWER MOSFET

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STD40NE03L pdf
® STD40NE03L
N - CHANNEL 30V - 0.012 - 40A TO-252
STripFETPOWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD40NE03L 30 V
< 0.016
40 A
www.DataSheet4Us.comTYPICAL RDS(on) = 0.012
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VG S
ID
ID
IDM()
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/ dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(**) Value limi ted only by the package
September 1999
Va l u e
30
30
± 20
20**
20**
160
55
0.37
7
-65 to 175
175
( 1) ISD 20A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
1/8


STMicroelectronics Electronic Components Datasheet

STD40NE03L Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STD40NE03L pdf
STD40NE03L
THERMAL DATA
Rth j-pc b Thermal Resistance Junction-PC Board
Max 2.7 oC/W
Rthj-amb Thermal Resistance Junction-ambient
Max 100 oC/W
Rthj-s ink Thermal Resistance Case-sink
T yp 1.5 oC/W
T l Maximum Lead Temperature F or Soldering Purpose
275 oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
www.DataSheet4U.com
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
Max Value
40
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 20 A
Resistance
VGS = 5 V ID = 20 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
40
Typ.
1.7
0.012
Max.
2.5
0.016
0.022
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 20 A
Min.
15
Typ.
28
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
2200
570
200
pF
pF
pF
2/8


Part Number STD40NE03L
Description N-CHANNEL POWER MOSFET
Manufacturer STMicroelectronics
Total Page 8 Pages
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STD40NE03L pdf
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