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STMicroelectronics Electronic Components Datasheet

STP130NH02L Datasheet

N-channel Power MOSFET

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STB130NH02L
STP130NH02L
N-CHANNEL 24V - 0.0034 - 120A D²PAK/TO-220
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STB130NH02L
STP130NH02L
24 V
24 V
< 0.0044 90 A(2)
< 0.0044 90 A(2)
TYPICAL RDS(on) = 0.0034 @ 10 V
TYPICAL RDS(on) = 0.005 @ 5 V
RDS(ON) * Qg INDUSTRY’s BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
Figure 1:Package
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
The STB_P130NH02L utilizes the latest advanced
design rules of ST’s proprietary STripFET™ technology.
It is ideal in high performance DC-DC converter
applications where efficiency is to be achieved at very
high output currents.
APPLICATIONS
SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER
OR-ING DIODE
Figure 2: Internal Schematic Diagram
Table 2: Ordering Information
SALES TYPE
STB130NH02LT4
STP130NH02L
MARKING
B130NH02L
P130NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1)
VDS
VDGR
Drain-source Voltage Rating
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(2) Drain Current (continuous) at TC = 25°C
ID(2)
IDM(3)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (4) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
April 2005
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Value
30
24
24
± 20
90
90
360
150
1
900
-55 to 175
Rev. 2.0
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1/13


STMicroelectronics Electronic Components Datasheet

STP130NH02L Datasheet

N-channel Power MOSFET

No Preview Available !

STP130NH02L pdf
STB130NH02L STP130NH02L
Table 4: THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.0
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 25 mA, VGS = 0
24
IDSS
IGSS
Zero Gate Voltage
Drain Current (VGS = 0)
Gate-body Leakage
Current (VDS = 0)
VDS = 20 V
VDS = 20 V TC = 125°C
VGS = ± 20 V
1
10
±100
Unit
V
µA
µA
nA
Table 6: ON (*)
Symbol
Parameter
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 5 V
ID = 45 A
ID = 22.5 A
Min.
1
Typ. Max.
0.0034 0.0044
0.005 0.008
Unit
V
Table 7: DYNAMIC
Symbol
Parameter
gfs (5)
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
RG Gate Input Resistance
Test Conditions
VDS = 10 V
ID = 45 A
VDS = 15V f = 1 MHz VGS = 0
Min.
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
Typ.
55
4450
1126
141
1.6
Max.
Unit
S
pF
pF
pF
2/13


Part Number STP130NH02L
Description N-channel Power MOSFET
Maker ST Microelectronics
Total Page 13 Pages
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