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STMicroelectronics Electronic Components Datasheet

STS8NFS30L Datasheet

N-CHANNEL Power MOSFET

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STS8NFS30L pdf
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® STS8NFS30L
STripFET
N - CHANNEL 30V - 0.018- 8A S0-8
MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
V D SS
RDS(on )
30 V <0.022
SCHOTTKY
IF (AV)
VRRM
3 A 30 V
ID
8A
V F(M AX)
0.51 V
DESCRIPTION:
This product associates the latest low voltage
StripFETin n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-
DC converters for printers, portable equipment,
and cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
S ym b o l
P ar ame te r
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
ID M( )
Ptot
Drain- gat e Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV) Average Forward Current
IFSM Surge Non Repetit ive Forward Current
IRSM Non Repetitive Peak Reverse Current
dv/dt Critical Rate Of Rise Of Reverse Voltage
() Pulse width limited by safe operating area
TL=125 oC
δ =0.5
tp= 10 ms
Sinusoidal
tp=100 µs
V alu e
30
30
± 20
8
5
32
2.5
V alu e
30
20
3
75
1
10000
Unit
V
V
V
A
A
A
W
Un it
V
A
A
A
A
V/µs
December 1999
1/8


STMicroelectronics Electronic Components Datasheet

STS8NFS30L Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STS8NFS30L pdf
STS8NFS30L
THERMAL DATA
R th j -a mb
R th j -a mb
Tstg
Tj
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junction-ambientSCHOT TKY
Storage T emperature Range
Maximum
Junction Temperature
(*) mounte d on FR-4 board (ste ady stat e)
50
100
-65 to 150
150
oC/W
oC/W
oC
oC
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 4 A
Resistance
VGS = 4. 5V ID = 4 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
8
Typ.
1.6
0.018
0.021
Max.
2.5
0.022
0.026
Unit
V
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =4 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
Typ.
10
Max.
Unit
S
1050
250
85
pF
pF
pF
2/8


Part Number STS8NFS30L
Description N-CHANNEL Power MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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