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SamHop Microelectronics
SamHop Microelectronics

STD3055NL Datasheet Preview

STD3055NL Datasheet

N-Channel E nhancement Mode Field Effect Transistor

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STD3055NL pdf
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S T U/D3055NL
S amHop Microelectronics C orp.
P reliminary May.28,2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
25V 21A
40@ VGS = 10V
50@ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TU S E R IE S
TO-251(l-P AK)
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-Pulsedb (300ms Pulse Width)
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
R JC
R JA
Limit
25
20
21
52
20
50
-55 to 175
3
50
Unit
V
V
A
A
A
W
C
C /W
C /W
1



SamHop Microelectronics
SamHop Microelectronics

STD3055NL Datasheet Preview

STD3055NL Datasheet

N-Channel E nhancement Mode Field Effect Transistor

No Preview Available !

STD3055NL pdf
S T U/D3055NL
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
IDSS VDS =24V, VGS =0V
IGSS VGS = 20V, VDS = 0V
VGS(th) VDS =VGS, ID = 250uA
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =6.0A
VGS =4.5V, ID= 5.2A
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 5V, VGS = 10V
VDS = 10V, ID =6.0A
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS c
C IS S
COSS
CRSS
VDS =8V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 10V
tr
ID = 1A
VGEN = 4.5V
tD(OFF) R L = 10 ohm
tf R GEN = 6 ohm
Total Gate Charge
Qg VDS=15V,ID =9A,VGS=10V
VDS=15V,ID =9A,VGS=4.5V
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =10V, ID = 6A
Qgd VGS =4.5V
2
Min Typ C Max Unit
25 V
1 uA
100 nA
0.8 1.1 1.8 V
28 40 m-ohm
40 50 m-ohm
25
7.8
A
S
559 PF
130 PF
102 PF
15.6 ns
23.3 ns
5.2 ns
9.8 ns
14.7 nC
8.1 nC
3 nC
2.4 nC


Part Number STD3055NL
Description N-Channel E nhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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