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  Samsung Electronic Components Datasheet  

KM44C16100B Datasheet

(KM44C16000B / KM44C16100B) 16M x 4bit CMOS Dynamic RAM

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KM44C16100B pdf
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KM44C16000B, KM44C16100B
CMOS DRAM
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time(-45, -5 or -6), package type(SOJ or TSOP-II) are optional fea-
tures of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 16Mx4 Fast
Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption
and high reliability.
FEATURES
• Part Identification
- KM44C16000B(5.0V, 8K Ref.)
- KM44C16100B(5.0V, 4K Ref.)
Active Power Dissipation
Speed
-45
-5
-6
8K
550
495
440
Unit : mW
4K
715
660
605
Refresh Cycles
Part
NO.
KM44C16000B*
KM44C16100B
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
Performance Range
Speed tRAC
tCAC
-45 45ns 12ns
-5 50ns 13ns
-6 60ns 15ns
tRC
80ns
90ns
110ns
tPC
31ns
35ns
40ns
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +5.0V±10% power supply
FUNCTIONAL BLOCK DIAGRAM
RAS
CAS
W
Control
Clocks
VBB Generator
Vcc
Vss
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
16,777,216 x 4
Cells
Column Decoder
Data in
Buffer
Data out
Buffer
DQ0
to
DQ3
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.


  Samsung Electronic Components Datasheet  

KM44C16100B Datasheet

(KM44C16000B / KM44C16100B) 16M x 4bit CMOS Dynamic RAM

No Preview Available !

KM44C16100B pdf
KM44C16000B, KM44C16100B
CMOS DRAM
PIN CONFIGURATION (Top Views)
KM44C160(1)00BK
VCC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
RAS
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VSS
31 DQ3
30 DQ2
29 N.C
28 N.C
27 N.C
26 CAS
25 OE
24 A12(N.C)*
23 A11
22 A10
21 A9
20 A8
19 A7
18 A6
17 VSS
(K : 400mil SOJ)
KM44C160(1)00BS
VCC
DQ0
DQ1
N.C
N.C
N.C
N.C
W
RAS
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VSS
31 DQ3
30 DQ2
29 N.C
28 N.C
27 N.C
26 CAS
25 OE
24 A12(N.C)*
23 A11
22 A10
21 A9
20 A8
19 A7
18 A6
17 VSS
(S : 400mil TSOP(II))
* (N.C) : N.C for 4K Refresh product
Pin Name
A0 - A12
A0 - A11
DQ0 - 3
VSS
RAS
CAS
W
OE
VCC
N.C
Pin Function
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power(+5.0V)
No Connection


Part Number KM44C16100B
Description (KM44C16000B / KM44C16100B) 16M x 4bit CMOS Dynamic RAM
Maker Samsung semiconductor
Total Page 20 Pages
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1 KM44C16100B (KM44C16000B / KM44C16100B) 16M x 4bit CMOS Dynamic RAM Samsung semiconductor
Samsung semiconductor
KM44C16100B pdf




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