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MGF65A3L Datasheet Preview

MGF65A3L Datasheet

Trench Field Stop IGBT

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MGF65A3L pdf
VCE = 650 V, IC = 30 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3L, MGF65A3L, FGF65A3L
Data Sheet
Description
KGF65A3L, MGF65A3L, and FGF65A3L are 650 V
Field Stop IGBTs. Sanken original trench structure
decreases gate capacitance, and achieves low saturation
voltage and switching losses reduction. Thus, Field Stop
IGBTs can improve the efficiency of your circuit.
Features
Low Saturation Voltage
High Speed Switching
With Integrated Fast Recovery Diode
RoHS Compliant
VCE ------------------------------------------------------ 650 V
IC (TC = 100 °C) ----------------------------------------- 30 A
Short Circuit Withstand Time -------------------------5 μs
VCE(sat)-----------------------------------------------1.6 V typ.
tf (TJ = 175 °C) ---------------------------------- 160 ns typ.
VF----------------------------------------------------1.6 V typ.
Applications
Uninterruptible Power Supply (UPS)
Inverter Circuit
Bridge Circuit
Package
TO247-3L
(1) (2) (3)
TO3PF-3L
(1) (2) (3)
(1)
TO3P-3L
(4)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(3)
(4)
Selection Guide
Part Number
KGF65A3L
MGF65A3L
FGF65A3L
Not to scale
Package
TO247-3L
TO3P-3L
TO3PF-3L
xGF65A3L-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Oct. 03, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
1



Sanken
Sanken

MGF65A3L Datasheet Preview

MGF65A3L Datasheet

Trench Field Stop IGBT

No Preview Available !

MGF65A3L pdf
KGF65A3L, MGF65A3L, FGF65A3L
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Symbol
VCE
VGE
Continuous Collector Current (1)
IC
Pulsed Collector Current
IC(PULSE)
Diode Continuous Forward Current (1)
IF
Diode Pulsed Forward Current
IF(PULSE)
Short Circuit Withstand Time
tSC
Conditions
TC = 25 °C
TC = 100 °C
PW 1 ms,
duty cycle 1%
TC = 25 °C
TC = 100 °C
PW 1 ms,
duty cycle 1%
VGE = 15 V,
VCE = 400 V
TJ = 175 °C
Power Dissipation
PD TC = 25 °C
Operating Junction Temperature
Storage Temperature Range
TJ
TSTG
Rating
650
±30
50
30
90
40(2)
30
90
5
217
72
175
55 to 150
Unit Remarks
V
V
A
A
A
A
A
A
μs
MGF65A3L
W KGF65A3L
FGF65A3L
°C
°C
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance of IGBT
(Junction to Case)
RθJC (IGBT)
Thermal Resistance of Diode
(Junction to Case)
RθJC (Di)
Conditions
Min. Typ.
——
——
——
——
Max.
0.69
2.08
1.15
2.28
Unit
°C/W
°C/W
Remarks
MGF65A3L
KGF65A3L
FGF65A3L
MGF65A3L
KGF65A3L
FGF65A3L
(1) IC and IF are determined by the maximum junction temperature for TO3P-3L package.
(2) Determined by bonding wires capability.
xGF65A3L-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Oct. 03, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
2


Part Number MGF65A3L
Description Trench Field Stop IGBT
Maker Sanken
Total Page 15 Pages
PDF Download
MGF65A3L pdf
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