Ordering number : ENN2959B
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
• High breakdown voltage.
• Adoption of MBIT process.
• Excellent hFE linearity.
Absolute Maximum Ratings at Ta=25°C
Collector Current (Pulse)
Electrical Characteristics at Ta=25°C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
hFE VCE=10V, IC=50mA
fT VCE=30V, IC=10mA
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=50mA, IB=5mA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO IE=10µA, IC=0
* : The 2SC4003 is classified by 50mA hFE as follows :
hFE 60 to 120 100 to 200
--55 to +150
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32505TN (PC)/82903TN (KT)/D1598HA (KT)/8219MO/6139MO, TS No.2959-1/4