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Sanyo Electric Components Datasheet

SBT100-16JS Datasheet

Schottky Barrier Diode

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SBT100-16JS pdf
Ordering number : ENA0442
SBT100-16JS
SANYO Semiconductors
DATA SHEET
SBT100-16JS
Schottky Barrier Diode (Twin Type · Cathode Common)
160V, 10A Rectifier
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Tj=150°C.
Low forward voltage (VF max=0.88V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
50Hz resistive load, Sine wave Tc=78°C
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
Note) * : Value per element
Symbol
VR
VF
IR
C
Rth(j-c)
Conditions
IR=2mA, Tj=25°C*
IF=5A, Tj=25°C*
VR=160V, Tj=25°C*
VR=10V, Tj=25°C*
Junction-Case : Smoothed DC
Ratings
160
165
10
100
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
min
160
Ratings
typ
0.82
20
100
max
0.88
200
4.0
Unit
V
V
µA
pF
°C / W
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 61506SD MS IM TB-00002384 No. A0442-1/3


Sanyo Electric Components Datasheet

SBT100-16JS Datasheet

Schottky Barrier Diode

No Preview Available !

SBT100-16JS pdf
Package Dimensions
unit : mm
7525-001
10.0 3.2 4.5
2.8
SBT100-16JS
Electrical Connection
Anode
Anode
Cathode
1.6
1.2
0.75
123
2.55 2.55
0.7
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-220ML(LS)
IF -- VF
3
2 Represented by max
10 Tj=150°C
7 25°C
5
3
2
1.0
7
5
3
2
0.1
0
0.5
20
Sine wave
18
16 180°
360°
14
Rectangular
12 wave
1.0 1.5
Forward Voltage, VF -- V
PF(AV) -- IO
(2) (4)
(1)
2.0 2.5
IT10962
(3)
10 θ
8 360°
6
(1)Rectangular wave θ=60°
4 (2)Rectangular wave θ=120°
2 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0
0 2 4 6 8 10 12 14
Average Output Current, IO -- A IT10964
IR -- VR
2
100
7
5
Tj=150°C typ
3
2
10
125°C typ
7
5
3
100°C typ
2
1.0
7
75°C typ
5
3
2
0 20 40 60 80 100 120 140
Reverse Voltage, VR -- V
PR(AV) -- VRM
16
(1)Rectangular wave θ=300°
14 (2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
12 (4)Sine wave θ=180°
Rectangular
10 wave
VR
8θ
360°
6
Sine wave
4
180°
VR
2 360°
160 180
IT10963
(1)
(2)
(3)
(4)
0
0 20 40 60 80 100 120 140 160 180
Peak Reverse Voltage, VRM -- V IT10965
No. A0442-2/3


Part Number SBT100-16JS
Description Schottky Barrier Diode
Maker Sanyo
Total Page 3 Pages
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