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SavantIC
SavantIC

2SC4916 Datasheet Preview

2SC4916 Datasheet

SILICON POWER TRANSISTOR

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2SC4916 pdf
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4916
DESCRIPTION
·With TO-3P(H)IS package
·High speed ;high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-Peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
7
14
3.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W



SavantIC
SavantIC

2SC4916 Datasheet Preview

2SC4916 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SC4916 pdf
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4916
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=300mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
ICBO Collector cut-off current
VCB=1500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Cob Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
VF Diode forward voltage
IF=5A
fT Transition frequency
IE=0.1A ; VCE=10V
Switching times resistive load
ts Storage time
tf Fall time
ICP=5A;IB1 =1A
IB2=-2A; RL=39B
MIN TYP. MAX UNIT
5V
5V
1.5 V
1 mA
83 250 mA
8 20
3.8 8
160 pF
1.3 1.8
V
13
MHz
2.0 3.0 µs
0.1 0.2 µs
2


Part Number 2SC4916
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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