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SavantIC
SavantIC

2SC4941 Datasheet Preview

2SC4941 Datasheet

SILICON POWER TRANSISTOR

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2SC4941 pdf
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4941
DESCRIPTION
·With TO-3PML package
·Switching power transistor
·High breakdown voltage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
ICM Collector current-Peak
IB Base current
IB Base current-Peak
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
1500
800
7
6
12
3
6
65
150
-55~150
UNIT
V
V
V
A
A
A
A
W
VALUE
1.92
UNIT
/W



SavantIC
SavantIC

2SC4941 Datasheet Preview

2SC4941 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

2SC4941 pdf
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCBO
Collector-base voltage
IC=1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
VCB=1200V; IE=0
ICEO Collector cut-off current
VCE=RatedVCEO; IB=0
IEBO Emitter cut-off current
VEB=RatedVEBO; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=0.6A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=3A
IB1=0.6A; IB2=-1.2A
VBB2=4V
RL=85C
Product Specification
2SC4941
MIN TYP. MAX UNIT
800 V
1500
V
0.5 V
1.5 V
100 µA
100 µA
100 µA
15
7
8 MHz
0.5 µs
3.5 µs
0.3 µs
2


Part Number 2SC4941
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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