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SavantIC
SavantIC

BDW51C Datasheet Preview

BDW51C Datasheet

SILICON POWER TRANSISTOR

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BDW51C pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDW51C
DESCRIPTION
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·With TO-3 package
·Complement to type BDW52C
·Excellent safe operating area
APPLICATIONS
·For use in power linear and
switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
100
100
5
15
20
7
125
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.4
UNIT
/W



SavantIC
SavantIC

BDW51C Datasheet Preview

BDW51C Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

BDW51C pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2.5A
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2.5A
VBE Base-emitter on voltage
IC=5A ; VCE=4V
ICEO Collector cut-off current
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCE=50V; IB=0
VCB=100V; IE=0
TC=150
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
hFE-2
DC current gain
IC=10A ; VCE=4V
fT Transition frequency
IC=0.5A ; VCE=4V
Product Specification
BDW51C
MIN TYP. MAX UNIT
100 V
1.0 V
3.0 V
2.5 V
1.5 V
1.0 mA
0.5
5.0
mA
2.0 mA
20 150
5
3 MHz
2


Part Number BDW51C
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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