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SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie GmbH

SSG4913 Datasheet Preview

SSG4913 Datasheet

Enhancement Mode Power MOSFET

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SSG4913 pdf
Elektronische Bauelemente
SSG4913
P-Ch Enhancement Mode Power MOSFET
-3.5 A, -20 V, RDS(ON) 130 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS & FEATURES
z The SSG4913 provide the designer with the
best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
z The SOP-8 package is universally preferred
for all commercial-industrial surface mount applications
and suited for low voltage applications
such as DC/DC converters.
z Simple Drive Requirement
z Lower On-resistance
z Fast Switching Performance
PACKAGE INFORMATION
Weight: 0.07936g
MARKING CODE
D1 D1 D2 D2
4913SS
1
S1 G1 S2 G2
= Date Code
2
Gate1
Drain1
78
4
Gate2
1
Source1
Drain2
56
3
Source2
SOP-8
B
LD
M
A
HG
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
ABSOLUTE MAXIMUM RATINGS
www.DataSheet4U.com Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
TJ, TSTG
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient3
Max
Symbol
RθJ-AMB
Ratings
-20
±8
-3.5
-2.8
-18
2
-55 ~ +150
0.02
Value
62.5
Unit
V
V
A
A
A
W
W/
Unit
/W
01-December-2008 Rev. A
Page 1 of 4



SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie GmbH

SSG4913 Datasheet Preview

SSG4913 Datasheet

Enhancement Mode Power MOSFET

No Preview Available !

SSG4913 pdf
Elektronische Bauelemente
SSG4913
P-Ch Enhancement Mode Power MOSFET
-3.5 A, -20 V, RDS(ON) 130 mΩ
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25)
Drain-Source Leakage Current(Tj=70)
Static Drain-Source On-Resistance
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS -20
-
-
V VGS = 0, ID = -250 uA
ΔBVDSS
/ΔTJ
- -0.028 -
V / °C Reference to 25°C, ID = -250 μA
VGS(th) -0.4 - -1.0
gfs - 6.5 -
V VDS = VGS, ID = -250 μA
S VDS = -5 V, ID = -3.5 A
IGSS
-
- ±100 nA VGS = ±8 V
IDSS
-
-
- -1 uA VDS = -16 V, VGS = 0
- -25 uA VDS = -12 V, VGS = 0
RDS(ON)
-
-
-
-
130
180
m
VGS = -4.5 V, ID = -3.5 A
VGS = -2.5 V, ID = -3.0 A
Qg - 6 8.5
ID = -3.5 A
Qgs - 0.8 - nC VDS = -5 V
Qgd - 1.3 -
VGS = -4.5 V
Td(on)
Tr
Td(off)
Tf
-
-
-
-
6.5
20
31
21
-
-
-
-
VDD = -5 V
ns
ID = -1 A
VGS = -4.5 V
RG = 6
Ciss
Coss
Crss
- 405 -
- 170 -
- 45 -
VGS = 0 V
pF VDS = -10 V
f = 1.0 MHz
SOURCE-DRAIN DIODE
Parameter
www.DFaotarSwhaeredt4OU.ncoVmoltage2
Symbol Min.
VSD
-
Continuous Source Current (Body Diode)
IS
-
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width300us, duty cycle2%.
Typ.
-
-
Max.
-1.2
-2.1
Unit Test Conditions
V IS= -2.1 A, VGS=0V
A VD = VG = 0 V, VS = -1.2 V
01-December-2008 Rev. A
Page 2 of 4


Part Number SSG4913
Description Enhancement Mode Power MOSFET
Maker SeCoS Halbleitertechnologie GmbH
Total Page 4 Pages
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