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Seme LAB
Seme LAB

D1022UK Datasheet Preview

D1022UK Datasheet

METAL GATE RF SILICON FET

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D1022UK pdf
TetraFET
D1022UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
(2 pls)
E
A
C2
1
3
54
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A 6.45
B 1.65R
C 45°
D 16.51
E 6.47
F 18.41
G 1.52
H 4.82
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.65R 0.005
5° 45° 5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.190
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
292W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.11/00



Seme LAB
Seme LAB

D1022UK Datasheet Preview

D1022UK Datasheet

METAL GATE RF SILICON FET

No Preview Available !

D1022UK pdf
D1022UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
DrainSource Breakdown
Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS
Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
Gate Threshold Voltage
VGS(th)match Matching Between Sides
VGS = 20V
ID = 10mA
VDS = 10V
ID = 10mA
VDS = 0
VDS = VGS
ID = 3A
VDS = VGS
1
2.4
GPS
h
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
TOTAL DEVICE
PO = 100W
VDS = 28V
IDQ = 1.2A
f = 500MHz
10
50
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 28V VGS = 5V f = 1MHz
Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
3 mA
1 mA
7V
mhos
0.1 V
dB
%
180 pF
90 pF
7.5 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 0.6°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.11/00


Part Number D1022UK
Description METAL GATE RF SILICON FET
Maker Seme LAB
Total Page 4 Pages
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