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HFP630 Datasheet Preview

HFP630 Datasheet

200V N-Channel MOSFET

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HFP630 pdf
July 2005
HFP630
200V N-Channel MOSFET
BVDSS = 200 V
RDS(on) typ = 0.34 ȍ
ID = 9 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 22 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.34 ȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
200
9.0
5.7
36
ρͤ͡
160
9.0
7.2
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
72
0.57
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.74
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡



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HFP630 Datasheet Preview

HFP630 Datasheet

200V N-Channel MOSFET

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HFP630 pdf
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 4.5 A
2.0
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
200
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 100 V, ID = 9.0 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 160 V, ID = 9.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.0 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
0.34 0.4
V
ש
-- -- V
0.2 -- ·͠ఁ
-- 1
-- 10
-- 100
-- -100
550 720
85 110
22 29
11 25
70 140
60 120
65 130
22 30 Οʹ
4.0 -- Οʹ
11 -- Οʹ
-- 9.0
-- 36
-- 1.5
140 --
0.87 --
A
V
ȝC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=3mH, IAS=9.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”9.0A, di/dt”300A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ” 300ȝs, Duty Cycle ” 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡


Part Number HFP630
Description 200V N-Channel MOSFET
Maker SemiHow
Total Page 8 Pages
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