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HFS10N65S Datasheet Preview

HFS10N65S Datasheet

N-Channel MOSFET

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HFS10N65S pdf
March 2014
HFS10N65S
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ ȍ
ID = 9.5 A
FEATURES
ƒ Originative New Design
ƒ Superior Avalanche Rugged Technology
ƒ Robust Gate Oxide Technology
ƒ Very Low Intrinsic Capacitances
ƒ Excellent Switching Characteristics
ƒ Unrivalled Gate Charge : 29 nC (Typ.)
ƒ Extended Safe Operating Area
ƒ Lower RDS(ON) ȍ 7\S #9GS=10V
ƒ 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
9.5*
5.7*
38*
ρ30
700
9.2
15.6
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
50
0.4
-55 to +150
300
*Drain current limited by maximum junction temperature
Units
9
$
$
$
9
P-
$
P-
9QV
:
:ഒ
ഒ
ഒ
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
2.5
62.5
Units
ഒ:
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡



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HFS10N65S Datasheet

N-Channel MOSFET

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HFS10N65S pdf
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ᒺ
VGS = 10 V, ID = 4.75 A͑
2.0
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 ᒺ
ID = 250 , Referenced to 25
VDS = 650 V, VGS = 0 V͑
VDS = 520 V, TC = 125ఁ͑
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
650
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 9.5 A,
RG = 25 ͑

 1RWH 
VDS = 520V, ID = 9.5 A,
VGS = 10 V
 1RWH 
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
0.8 0.98
9
വ
-- -- 9
0.7 -- 9ഒ
-- 1 ᒺ
-- 10 ᒺ
-- 100 ᒹ
-- -100 ᒹ
1450
145
13
1885
190
17
ᓂ
ᓂ
ᓂ
23 55
69 150
144 300
77 165
29 38
6.8 --
10.3 --
ᓩ
ᓩ
ᓩ
ᓩ
Q&
Q&
Q&
-- 9.5
-- 38
-- 1.4
420 --
4.2 --
$
9
ᓩ
˩&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡


Part Number HFS10N65S
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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