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Semikron Electronic Components Datasheet

SEMiX603GAL066HDs Datasheet

Trench IGBT Modules

No Preview Available !

SEMiX603GAL066HDs pdf
SEMiX603GAL066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAL066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 2xICnom
VCC = 360 V
VGE 15 V
VCES 600 V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 9.6 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
600
720
541
600
1200
-20 ... 20
6
-40 ... 175
771
562
600
1200
1800
-40 ... 175
795
577
600
1200
1800
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.45
1.7
0.9
0.85
0.9
1.4
5.8
0.15
37.0
2.31
1.10
4800
0.67
max. Unit
1.85
2.1
1
0.9
1.4
2.0
6.5
0.45
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAL
© by SEMIKRON
Rev. 0 – 16.04.2010
1


Semikron Electronic Components Datasheet

SEMiX603GAL066HDs Datasheet

Trench IGBT Modules

No Preview Available !

SEMiX603GAL066HDs pdf
SEMiX603GAL066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAL066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Conditions
VCC = 300 V
IC = 600 A
RG on = 3
RG off = 3
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 600 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Rth(j-c)
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 3800 A/µs
VGE = -8 V
VCC = 300 V
Tj = 150 °C
Tj = 150 °C
per diode
Freewheeling diode
VF = VEC
IF = 600 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0 Tj = 25 °C
Tj = 150 °C
rF Tj = 25 °C
IRRM
Qrr
Err
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 3800 A/µs
VGE = -8 V
VCC = 300 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Module
LCE
RCC'+EE'
Rth(c-s)
Ms
Mt
res., terminal-chip
per module
to heat sink (M5)
TC = 25 °C
TC = 125 °C
to terminals (M6)
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
min.
typ.
150
145
12
1050
105
43
max.
0.087
Unit
ns
ns
mJ
ns
ns
mJ
K/W
1.4 1.60 V
1.4 1.6 V
0.9
0.75
0.5
0.8
1
0.85
0.7
0.9
350
63
1.1 V
0.95 V
0.8 m
1.1 m
A
µC
13 mJ
0.11 K/W
1.3 1.5 V
1.3 1.5 V
0.9
0.75
0.4
0.7
1
0.85
0.6
0.8
350
63
1.1 V
0.95 V
0.7 m
0.9 m
A
µC
13 mJ
0.11 K/W
20 nH
0.7 m
1 m
0.04 K/W
3 5 Nm
2.5 5 Nm
Nm
300 g
493 ± 5%
3550
±2%
K
GAL
2
Rev. 0 – 16.04.2010
© by SEMIKRON


Part Number SEMiX603GAL066HDs
Description Trench IGBT Modules
Maker Semikron
Total Page 5 Pages
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