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Semikron Electronic Components Datasheet

SEMIX303GB12T4S Datasheet

Trench IGBT Modules

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SEMIX303GB12T4S pdf
SEMiX 303GB12T4s
SEMiX®3s
Trench IGBT Modules
SEMiX 303GB12T4s
www.DataSheet4U.com
Target Data
Features
   
        
         
  
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Typical Applications
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Symbol Conditions
IGBT

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66 G
 66 G
7-A
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./.9) IJ&
GB
1
16-07-2007 SCH
© by SEMIKRON


Semikron Electronic Components Datasheet

SEMIX303GB12T4S Datasheet

Trench IGBT Modules

No Preview Available !

SEMIX303GB12T4S pdf
SEMiX 303GB12T4s
SEMiX®3s
Trench IGBT Modules
SEMiX 303GB12T4s
www.DataSheet4U.com
Target Data
Features
   
        
         
  
     !
Typical Applications
 "     #
 $%
    & # 
Remarks
       # 
'()* +,
 %#   !    #
 -').*
Characteristics
Symbol Conditions
Inverse Diode
@  
1@   6.. "< :  . 
@.
@
1778
E

7-AK
Module
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C
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G
IJ&

C
C
IJ&
O
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NC
I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
16-07-2007 SCH
© by SEMIKRON


Part Number SEMIX303GB12T4S
Description Trench IGBT Modules
Maker Semikron International
Total Page 5 Pages
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