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Siemens Electronic Components Datasheet

BUZ60B Datasheet

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BUZ60B pdf
Semiconductor
Data Sheet
BUZ60
October 1998 File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power
Features
[ /Title
(BUZ60
)
/Sub-
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 5.5A, 400V
• rDS(ON) = 1.000
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
ject
(5.5A,
400V,
1.000
Ohm,
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17414.
Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
N-Chan- PART NUMBER
PACKAGE
nel BUZ60
TO-220AB
BRAND
BUZ60
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Power NOTE: When ordering, use the entire part number.
Symbol
MOS-
FET)
D
/Author
() G
/Key-
words
S
(Harris
Semi-
conduc- Packaging
tor, N-
Chan-
JEDEC TO-220AB
nel
Power
MOS-
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
FET,
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998



Siemens Electronic Components Datasheet

BUZ60B Datasheet

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BUZ60B pdf
BUZ60
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ60
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400
400
5.5
22
±20
75
0.6
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 400V, VGS = 0V
TJ = 125oC, VDS = 400V, VGS = 0V
VGS = 20V, VDS = 0V
ID = 2.5A, VGS = 10V (Figure 8)
VDS = 25V, ID = 2.5A (Figure 11)
VCC = 30V, ID 2.7A, VGS = 10V, RGS = 50Ω,
RL = 10. (Figures 14, 15)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10)
400
2.1
-
-
-
-
1.7
-
-
-
-
-
-
-
-
3
20
100
10
0.9
2.5
30
40
110
50
1.5
120
35
1.67
75
-
4
250
1000
100
1
-
45
60
140
65
2
180
60
V
V
µA
µA
nA
S
ns
ns
ns
ns
pF
pF
pF
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
ISD TC = 25oC
- - 5.5
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISDM
- - 22
VSD
TJ = 25oC, ISD = 11A, VGS = 0V
- 1.15 1.6
trr TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs, - 1000 -
QRR
VR = 100V
-5-
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
2


Part Number BUZ60B
Description main ratings
Maker Siemens Semiconductor Group
Total Page 5 Pages
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