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Sirenza Microdevices
Sirenza Microdevices

SDM-09120 Datasheet Preview

SDM-09120 Datasheet

Class AB 130W Power Amplifier Module

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SDM-09120 pdf
Product Description
Sirenza Microdevices’ SDM-09120 130W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
Functional Block Diagram
SDM-09120
SDM-09120Y
Pb RoHS Compliant
& Green Package
925-960 MHz Class AB
130W Power Amplifier Module
Vgs1
+3V DC to +6 V DC
+28V DC
Vds1
Gnd
RFin
180o
Balun
Gnd
0o
Vgs 2
+3V DC to +6 V DC
0o
Gnd Product Features
Balun
Available in RoHS compliant packaging
RFout 50 W RF impedance
130W Output P1dB
180o Gnd Single Supply Operation : Nominally 28V
High Gain: 15 dB at 942 MHz
+28V DC
Vds2 High Efficiency: 42% at 942 MHz
Case Flange = Ground
Key Specifications
Applications
Base Station PA driver
Repeater
CDMA
GSM / EDGE
Symbol
Parameter
Units Min. Typ.
Frequency
Frequency of Operation
MHz 925
-
P1dB
Gain
Output Power at 1dB Compression, 943 MHz
120W PEP Output Power, 942MHz and 943MHz
W 120 130
dB 14 15
Gain Flatness
Peak-to-Peak Gain Variation, 120W PEP, 925 - 960MHz
dB - 0.3
IRL Input Return Loss, 120W PEP Output Power, 925 - 960MHz
dB - -14
IMD 3rd Order Product. 120W PEP Output, 942MHz and 943MHz
dBc - -28
IMD Variation
120W PEP Output, Change in Spacing 100KHz - 25MHz
dB - 1.0
Efficiency
Drain Efficiency, 120W PEP Output, 942MHz and 943MHz
Drain Efficiency, 120W CW Output, 943MHz
% 32 33
% - 42
Delay
Signal Delay from Pin 3 to Pin 8
nS - 4.0
Phase Linearity
Deviation from Linear Phase (Peak-to-Peak)
Test Conditions Zin = Zout = 50, VDD = 28.0V, IDQ1 = IDQ2 =500mAT TFlange = 25ºC
Deg -
0.7
Max.
960
-
-
0.5
-12
-26
-
-
-
-
-
Quality Specifications
Parameter
Description
ESD Rating
Human Body Model
MTTF
200oC Channel
Unit
Volts
Hours
Typical
2000
1.2 X 106
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-103478 Rev E



Sirenza Microdevices
Sirenza Microdevices

SDM-09120 Datasheet Preview

SDM-09120 Datasheet

Class AB 130W Power Amplifier Module

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SDM-09120 pdf
SDM-09120 925-960 MHz 130W Power Amp Module
Pin Description
Pin # Function
Description
1
2,4,7,9
VGS1
Ground
LDMOS FET Q1 and Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
Module Topside ground.
3 RF Input Internally DC blocked
5
VGS2
LDMOS FET Q3 and Q4 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
6 VD2 LDMOS FET Q3 and Q4 drain bias. See Note 1.
8 RF Output Internally DC blocked
10
Flange
VD1
Ground
LDMOS FET Q1 and Q2 drain bias. See Note 1.
Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures
optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for
Power Modules.
Simplified Device Schematic
1 +3V DC to +6 V DC
Q1
10+28V DC
2 180o
Q2
3 Balun
0o
4
5 +3V DC to +6 V DC
Q3
Q4
0o
Balun
180o
9
8
7
+28V DC
6
Absolute Maximum Ratings
Parameters
Value
Unit
Drain Voltage (VDD)
RF Input Power
35 V
+43 dBm
Load Impedance for Continuous Operation
Without Damage
5:1 VSWR
Control (Gate) Voltage, VDD = 0 VDC
15 V
Output Device Channel Temperature
+200
ºC
Operating Temperature Range
-20 to
+90
ºC
Storage Temperature Range
-40 to
+100
ºC
Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation see typical setup val-
ues specified in the table on page one.
Note 1:
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the VD leads to
accommodate modulated signals.
Note 2:
Gate voltage must be applied to VGS leads simultaneously with
or after application of drain voltage to prevent potentially
destructive oscillations. Bias voltages should never be applied
to a module unless it is properly terminated on both input and
output.
Note 3:
The required VGS corresponding to a specific IDQ will vary from
module to module and may differ between VGS1 and VGS2 on
the same module by as much as ±0.10 volts due to the normal
die-to-die variation in threshold voltage for LDMOS transistors.
Note 4:
The threshold voltage (VGSTH) of LDMOS transistors varies with
device temperature. External temperature compensation may
be required. See Sirenza application notes AN-067 LDMOS
Bias Temperature Compensation.
Note 5:
This module was designed to have it's leads hand
soldered to an adjacent PCB. The maximum soldering iron tip
temperature should not exceed 700° C, and the soldering iron
tip should not be in direct contact with the lead for longer than
10 seconds. Refer to app note AN054 (www.sirenza.com) for
further installation instructions.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103478 Rev E


Part Number SDM-09120
Description Class AB 130W Power Amplifier Module
Maker Sirenza Microdevices
Total Page 5 Pages
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