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Toshiba Electronic Components Datasheet

1SS336 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

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1SS336 pdf
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS336
Ultra High Speed Switching Application
1SS336
Unit: mm
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.84V (typ.)
z Fast reverse recovery time : trr = 7ns (typ.)
z Small total capacitance : CT = 7pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
IFM
IO
IFSM
P
600 *
200 *
6*
150
mA
mA
A
mW
Junction temperature
Storage temperature
Tj 150 °C JEDEC
Tstg 55~150 °C JEITA
TD-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1E
temperature/current/voltage and the significant change in
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 10mA
IF = 100mA
IF = 200mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 30mA, Fig.1
Min Typ. Max Unit
0.64
0.78
V
0.84 1.2
― ― 0.25
― ― 0.50 μA
7 pF
7 20 ns
1 2007-11-01


Toshiba Electronic Components Datasheet

1SS336 Datasheet

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

No Preview Available !

1SS336 pdf
Fig.1 Reverse Recovery Time (trr) Test Circuit
1SS336
Marking
2 2007-11-01


Part Number 1SS336
Description DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
Maker Toshiba Semiconductor
Total Page 3 Pages
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