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Toshiba Electronic Components Datasheet

K1119 Datasheet

2SK1119

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K1119 pdf
2SK1119
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1119
DCDC Converter and Motor Drive Applications
z Low drainsource ON resistance : RDS (ON) = 3.0 (typ.)
z High forward transfer admittance : |Yfs| = 2.0 S (typ.)
z Low leakage current
: IDSS = 300 µA (max) (VDS = 800 V)
z Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
1000
1000
±20
4
12
100
150
55~150
V
V
V
A
W
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.25
83.3
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-09


Toshiba Electronic Components Datasheet

K1119 Datasheet

2SK1119

No Preview Available !

K1119 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
VDS = 800 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2 A
VDS = 20 V, ID = 2 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
Gatesource charge
Qgs VDD 400 V, VGS = 10 V, ID = 6 A
Gatedrain (“miller”) charge
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
IDR = 4 A, VGS = 0 V
Marking
2SK1119
Min Typ. Max Unit
— — ±100 nA
— — 300 µA
1000 — — V
1.5 — 3.5
— 3.0 3.8
1.0 2.0
— 700 —
— 55 —
— 100 —
V
S
pF
— 18 —
— 30 —
ns
— 12 —
— 70 —
— 60 —
— 35 — nC
— 25 —
Min Typ. Max Unit
——
4
A
— — 12 A
1.9
V
K1119
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09


Part Number K1119
Description 2SK1119
Maker Toshiba Semiconductor
Total Page 6 Pages
PDF Download
K1119 pdf
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