TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
Switching Power Supply Applications
z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.)
z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain−gate voltage (RGS = 20 kΩ)
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Storage temperature range
−55 to 150
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to
1.39 °C / W
41.6 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.