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Toshiba Electronic Components Datasheet

K1365 Datasheet

2SK1365

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K1365 pdf
2SK1365
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1365
Switching Power Supply Applications
z Low drainsource ON resistance : RDS (ON) = 1.5 (typ.)
z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
1000
1000
±20
7
21
90
150
55 to 150
V
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
1.39 °C / W
41.6 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29


Toshiba Electronic Components Datasheet

K1365 Datasheet

2SK1365

No Preview Available !

K1365 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±20 V, VDS = 0 V
VDS = 800 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
ID = 4 A, VGS = 10 V
VDS = 20 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 7 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
IDR
IDRP
VDSF
Test Condition
IDR = 7 A, VGS = 0 V
2SK1365
Min
1000
1.5
2.0
Typ.
1.5
4.0
1300
100
180
Max
±50
300
3.5
1.8
Unit
nA
μA
V
V
S
pF
— 25 —
— 40 —
ns
— 20 —
— 100 —
— 120 —
— 70 —
— 50 —
nC
Min Typ. Max Unit
—— 7 A
— — 21 A
— — 1.9 V
Marking
K1365
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29


Part Number K1365
Description 2SK1365
Maker Toshiba Semiconductor
Total Page 6 Pages
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