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TSD60R700WT Datasheet Preview

TSD60R700WT Datasheet

N-Channel MOSFET

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TSD60R700WT pdf
TSD60R700WT/TSU60R700WT
600V 6A N-Channel SJ-MOSFET
General Description
Features
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 600V @TJ = 25
• Typ. RDS(on) = 0.63Ω
• Ultra Low gate charge (typ. Qg = 12nC)
• 100% avalanche tested
TSD60R700WT
TSU60R700WT
TO-252
Absolute Maximum Ratings
TO-251
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
Parameter
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
Drain Current Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
PD Power Dissipation (TC = 25)
TJ, TSTG
Operating and Storage Temperature
Range
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Value
600
6
18
±30
192
1.6
0.5
37
-55 to +150
Value
3.4
62
Unit
V
A
A
V
mJ
A
mJ
W
Unit
/W
/W
© 2015 Truesemi Semiconductor Corporation
www.truesemi.com



Truesemi
Truesemi

TSD60R700WT Datasheet Preview

TSD60R700WT Datasheet

N-Channel MOSFET

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TSD60R700WT pdf
Electrical Characteristics TC = 25unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
IDSS
IGSSF
IGSSR
On Characteristics
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
VGS = 0V, ID = 250µA,
TJ = 25
VDS = 600V, VGS = 0V
-TJ = 150
Gate-Body Leakage Current,
Forward
VGS = 30V, VDS = 0V
Gate-Body Leakage Current,
Reverse
VGS = -30V, VDS = 0V
600
--
--
--
Gate Threshold Voltage
Static Drain-Source On-
Resistance
VDS = VGS, ID = 250µA
2.5
VGS = 10V, ID = 2A (Note 3) --
gFS Forward Trans conductance VDS = 10V, ID = 2A (Note 3)
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = 50V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 6A
RG = 25Ω
VDS = 480V, ID = 6A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward
Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0V, IF = 6A
trr
Reverse Recovery Time
VGS = 0V, IF = 6A
Qrr Reverse Recovery Charge diF/dt =100A/µs
Irrm
Peak Reverse Recovery
Current
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Notes
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3.Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
Typ
--
--
--
--
--
0.63
2.5
480
25
3
40
25
95
18
12
2.5
4
--
--
0.9
226
1.3
10
Max
--
1
100
100
-100
4.0
0.7
--
--
--
--
-­
-­
-­
-­
-­
-­
-­
5
15
1.2
--
--
--
Unit
V
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
A
© 2015 Truesemi Semiconductor Corporation
2
www.truesemi.com


Part Number TSD60R700WT
Description N-Channel MOSFET
Maker Truesemi
Total Page 8 Pages
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